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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 4. P. 077-081.
Modelling vacancy microvoid formation in dislocation-free silicon single crystals
University of State & Municipal Government
70B, Zhukovskii str., 69002 Zaporozhye, Kyiv, Ukraine
Abstract. An alternative mathematical model of vacancy microvoid formation in
dislocation-free silicon single crystals was represented. The analysis of conditions of
microvoid nucleation inside the bulk of crystals during cooling after their growth was
carried out. The possibility of formation of a quasi-stationary microvoid profile in largescale crystals within the temperature range 1130…1070 °С has been shown.
Keywords: point defect, grown-in microdefect, vacancy microvoid, CZ-Si, FZ-Si.
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