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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 4. P. 082-084.
Electric properties of TlInS2 single crystals
Institute of Physics, Azerbaijan National Academy of Sciences
AZ 1143 Baku, G. Javid avenue, 33
E-mail: asadov_salim@mail.ru
Abstract. Injection currents are studied in high-resistive layer of TlInS2 single crystals
and the following parameters were determined: equilibrium concentration of charge
carriers in the allowed band p0 = 1.67⋅1010 cm−3
; concentration of traps Nt = 1012cm−3
;
capture factor θ = 0.17; mobility of charge carriers μ = 3.3⋅10−3
cm2
/V⋅s; the depth of trap
level responsible for the injection current Et = 0.44 eV.
Keywords: injection current, single crystal, charge transport, space charge, capture
factor.
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