Semiconductor Physics, Quantum Electronics and Optoelectronics, 10 (4) P. 001-008 (2007).
DOI: https://doi.org/10.15407/spqeo10.04.001


References

1. Yu.G. Shretter, Yu.T. Rebane, V.A. Zykov, V.G. Sidorov, Wide-Gap Semiconductors. Nauka, St.-Petersburg, 2001 (in Russian).
2. H. Morkoç, Nitride Semiconductors and Devices. Springer, Berlin, 1999.
https://doi.org/10.1007/978-3-642-58562-3
3. V.N. Danilin, Yu.P. Dokuchaev, T.A. Zhukova, M.A. Komarov, High-power high-temperature capable and radiation-resistant microwave devices of new generation with wide-gap AlGaN/GaN heterojunction structures // Obzory po Elektronnoi Tekhnike, Ser. 1. SVCh Tekhnika. State Unitary Enterprise Research Institute "Pulsar", Moscow, 2001 (in Russian).
4. P. Kordoš, GaN-based electronics: Material and device issues, in: Proc. ASDAM-2000, Smolenice Castle, Slovakia, 2000, p. 47-54.
5. M.S. Noor, Contact mechanisms and design principles for alloyed ohmic contacts // J. Appl. Phys. 95(12), p. 7940-7953 (2004).
https://doi.org/10.1063/1.1712016
6. N.A. Papanicolaou, K. Zekentes, High temperature characteristics of Ti/Al and Cr/Al ohmic contacts to n-type GaN // Solid-State Electron. 46, p. 1975-1981 (2002).
https://doi.org/10.1016/S0038-1101(02)00137-5
7. A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, P.M. Lytvyn, V.V. Milenin, Yu.N. Sveshnikov, Thermal stability of multilayer contacts formed on GaN // Pis'ma v Zh. Tekhn. Fiz. 31(24), p. 88-94 (2005) (in Russian)
https://doi.org/10.1134/1.2150904
Techn. Phys. Lett. 31(12), p. 1078 (2005).
https://doi.org/10.1134/1.2150904
8. F. Lucolano, F. Roccaforte, F. Giannazo, A. Alberti, V. Raineri, Current transport in Ti/Al/Ni/Au ohmic contacts to GaN and AlGaN // Mater. Sci. Forum 556-557, p. 1027-1030 (2007).
https://doi.org/10.4028/www.scientific.net/MSF.556-557.1027
9. N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, V.V. Milenin, Interactions between phases and the features of structural relaxation in TiBx-n-GaAs (InP, GaP, 6H SiC) contacts exposed to active treatments // Fizika Tekhnika Poluprovodnikov 38(7), p. 769-774 (2004) (in Russian).
https://doi.org/10.1134/1.1777591
10. A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Kladko, R.V. Konakova, A.V. Kuchuk, Ya.Ya. Kudryk, O.S. Lytvyn, V.V. Milenin, Yu.N. Sveshnikov, Heat-resistant Au-TiBx-n-GaN Schottky diodes, in: Proc. of the 16th Intern. Crimean Conf. "Microwave & Telecommunication Technology", September 11-15, 2006, Sevastopol, Weber, p. 644-645 (2006).
https://doi.org/10.1109/CRMICO.2006.256141
11. A.S. Usikov, V.V. Tretyakov, A.V. Bobyl, R.N. Kyutt, V.V. Lundin, B.V. Pushnyi, N.M. Shmidt, Internal microstresses, distribution of composition and cathodoluminescence over section of AlxGa1-xN epitaxial layers on sapphire // Fizika Tekhnika Poluprovodnikov 34(11), p. 1300-1306 (2000) (in Russian).
https://doi.org/10.1134/1.1325417
12. V.P. Kladko, S.V. Chornen'kii, A.V. Naumov, A.V. Komarov, M. Tasapo, Yu.N. Sveshnikov, S.A. Vitusevich, A.E. Belyaev, Structural defects at heteroboundaries and photoluminescence properties of GaN and AlxGa1−xN/GaN epitaxial layers grown on sapphire // Fizika Tekhnika Poluprovodnikov 40(9), p. 1087-1093 (2006) (in Russian)
https://doi.org/10.1134/S1063782606090132
Semiconductors 40, p.1060 (2006).
13. V.V. Ratnikov, R.N. Kyutt, T.V. Shubina, T. Paskova, B. Monemar, Determination of microdistortion components and their application to structural characterisation of HVPE GaN epitaxial layers // J. Phys. D: Appl. Phys. 34, p. A30-A34 (2001).
https://doi.org/10.1088/0022-3727/34/10A/307
14. A.N. Andreev, M.G. Rastegaeva, V.P. Rastegaev, S.A. Reshanov, On allowance for current spreading in a semiconductor when determining resistance of ohmic contacts // Fizika Tekhnika Poluprovodnikov 32(8), p. 832-837 (1998) (in Russian).
https://doi.org/10.1134/1.1187496
15. Joon Scop Kwak, S.E. Mohney, Je-Yi Lin, R.S. Kern, Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability // Semicond. Sci. Technol. 15, p. 756-760 (2000).
https://doi.org/10.1088/0268-1242/15/7/316
16. W. Götz, N.M. Johnson, C. Chen, H. Lin, C. Kuo, W. Imler, Activation energies of Si donors in GaN // Appl. Phys. Lett. 68(22), p. 3144-3146 (1996).
https://doi.org/10.1063/1.115805
17. A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, V.V. Milenin, Yu.N. Sveshnikov, V.N. Sheremet, On the tunneling current flow mechanism in Au-TiBx-n-GaN-i-Al2O3 Schottky barrier diodes // Semiconductor Physics, Quantum Electronics and Optoelectronics 10(3), p. 1-5 (2007).
18. V.V. Evstropov, M. Dzhumaeva, Yu.V. Zhilyaev, N. Nazarov, A.A. Sitnikova, L.M. Fedorov, Dislocation nature and model for excess-tunneling current in the p-n structures on the basis of GaP // Fizika Tekhnika Poluprovodnikov 34(11), p. 1357- 1362 (2000) (in Russian)
https://doi.org/10.1134/1.1325428
Semiconductors 34, p. 1305 (2000).
https://doi.org/10.1134/1.1325428
19. V.V. Evstropov, Yu.V. Zhilyaev, M. Dzhumaeva, N. Nazarov, Tunnel-excess current in AIIIBV nondegenerate barrier p-n and m-s structures on Si // Fizika Tekhnika Poluprovodnikov 31(2), p. 152-158 (1997) (in Russian)
https://doi.org/10.1134/1.1187092
Semiconductors 31, p. 115 (1997).
https://doi.org/10.1134/1.1187092
20. M. Shur, GaAs Devices and Circuits. Plenum Press, New York−London, 1987.
https://doi.org/10.1007/978-1-4899-1989-2