|
Semiconductor Physics, Quantum Electronics and Optoelectronics, 10 (4) P. 009-014 (2007).
DOI:
https://doi.org/10.15407/spqeo10.04.009
References
| 1. K.L. Starostin, The temperature dependence of the decreasing rate of electron concentration in n-Ge and n-Si under the irradiation by fast neutrons // Fizika Tekhnika Poluprovodn. 4 (9), p. 1823-1824 (1970). | | | | 2. G.S. Karumidze, Effect of neutron-irradiation temperature on structure-defect formation in silicon grown by the Czochralski method // Fizika Tekhnika Poluprovodn. 24 (11), p. 1973-1977 (1990). | | | | 3. A.P. Dolgolenko, P.G. Litovchenko, M.D. Varentsov, G.P. Gaidar, A.P. Litovchenko, The particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen // Scientific Papers of the Institute for Nuclear Research No. 2(15), p. 106-114 (2005). | | | 4. B.R. Gossick, Disordered regions in semiconductors bombarded by fast neutrons // J. Appl. Phys. 30 (8), p. 1214-1218 (1959).
https://doi.org/10.1063/1.1735295 | | | 5. A.P. Dolgolenko, I.I. Fishchuk, A-centres build-up kinetics in the conductive matrix of pulled n-type silicon with calculation of their recharges at defect clusters // Phys. status solidi (a) 67 (8), p. 407-411 (1981).
https://doi.org/10.1002/pssa.2210670207 | | | 6. P. Kaminski, R. Kozlowski, E. NossarzewskaOrlowska, Formation of electrically active defects in neutron irradiated silicon // Nucl. Instrum. and Meth. Phys. Res. B 186, p. 152-156 (2002)
https://doi.org/10.1016/S0168-583X(01)00889-8 | | | Highresolution photoinduced transient spectroscopy of neutron irradiated bulk silicon // Nucl. Instrum. and Meth. Phys. Res. A 476 (3), p. 639-644 (2002).
https://doi.org/10.1016/S0168-9002(01)01652-7 | | | 7. I. Pintilie, C. Tivarus, L. Pintilie, M. Moll, E. Fretwurst, G. Lindstrom, Thermally stimulated current method applied to highly irradiated silicon diodes // Nucl. Instrum. and Meth. Phys. Res. A 476, p. 652-657 (2002).
https://doi.org/10.1016/S0168-9002(01)01654-0 | | | 8. A.P. Dolgolenko, P.G. Litovchenko, M.D. Varentsov, G.P. Gaidar, A.P. Litovchenko, Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen // Phys. status solidi (b) 243 (8), p. 1842-1852 (2006).
https://doi.org/10.1002/pssb.200541074 | | | 9. C.P. Ewels, R. Jones, S. Oberg, J. Miro, P. Deak, Shallow thermal donor defects in silicon // Phys. Rev. Lett. 77 (5), p. 865-868 (1996).
https://doi.org/10.1103/PhysRevLett.77.865 | | | 10. Y.-H. Lee, N.N. Gerasimenko, J.W. Corbett, EPR study of neutron-irradiated silicon: A positive charge state of the 〈100〉 split di-interstitial // Phys. Rev. B 14 (10), p. 4506-4520 (1976).
https://doi.org/10.1103/PhysRevB.14.4506 | | | 11. I.D. Konozenko, A.K. Semenyuk, V.I. Khivrich, Radiation defects created by 60Co-rays in n- and ptype Si of high-purity // Phys. status solidi 35 (2), p. 1043-1052 (1969)
https://doi.org/10.1002/pssb.19690350257 | | | Radiation defects in Si of high purity // Radiation Effects 8, p. 121-127 (1971).
https://doi.org/10.1080/00337577108231017 | | |
|
|