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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 4. P. 009-014.
Dependence of the defect introduction rate on the dose
of irradiation of p-Si by fast-pile neutrons
Institute for Nuclear Research, NAS of Ukraine,
47, prospect Nauky, 03680 Kyiv, Ukraine, fax: 380-44-5254463
* Corresponding author: e-mail: gaidar@kinr.kiev.ua
Abstract. We have studied the high-resistance samples of p-Si (р 00 = (3.3 ± 0.5) ×
× 10 12 cm
−3 ) and n-Si (n 0 = (2.0 ± 0.3) × 10 12 cm
−3 ) grown by the floating-zone technique
after the irradiation by fast-pile neutrons at 287 К. The dose and the temperature
dependences of the effective concentration of carriers have been measured. The
calculation has been carried out in the framework of Gossick's corrected model. It is
shown that the radiation hardness of n- and p-Si, on the one hand, is defined by clusters,
and, on the other hand, by vacancy defects (acceptors) in n-Si and by interstitial defects
(donors and acceptors) in p-Si. We have determined that, during the irradiation of p-Si by
small doses of neutrons, the change of a charge state of interstitial defects leads to the
annealing of these defects and to a decrease of their introduction rate.
Keywords: silicon, neutron irradiation, radiation hardness, radiation defect, cluster.
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