Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 4. P. 015-020.

Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
E.V. Grushko1, O.L. Maslyanchuk1, X. Mathew2, V.V. Motushchuk1, L.A. Kosyachenko1, E.A. Streltsov3

1Chernivtsi National University, 58012 Chernivtsi, Ukraine
2Centro de Investigacion en Energia-UNAM, 62580, Temixco, Morelos, Mexico
3Belarussian State University, 4, F. Skaryna Ave., Minsk 220050, Belarus E-mail: lakos @ chv.

Abstract. A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on the continuity equation and incorporating the surface recombination losses does not explain the measured spectra in the entire range of wavelengths, particularly the above- mentioned decay in the short-wavelength region. The satisfactory description of the measured spectra is achieved by proposing a model, in which the surface recombination along with the Schottky effect resulted in the presence of a dead layer in the space-charge region is taken into account. By varying the parameters such as uncompensated carrier concentration and carrier lifetime, the above model can explain the actual photoresponse spectra.

Keywords: CdTe thin-film, CdTe Schottky diode, surface recombination, spectral response.

Full Text (PDF)

Back to N4 Volume 10