Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 4. P. 015-020.
Spectral distribution of photoelectric quantum yield
of thin-film Au-CdTe diode structure
1Chernivtsi National University, 58012 Chernivtsi, Ukraine
Abstract. A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of
a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The
theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on
the continuity equation and incorporating the surface recombination losses does not
explain the measured spectra in the entire range of wavelengths, particularly the above-
mentioned decay in the short-wavelength region. The satisfactory description of the
measured spectra is achieved by proposing a model, in which the surface recombination
along with the Schottky effect resulted in the presence of a dead layer in the space-charge
region is taken into account. By varying the parameters such as uncompensated carrier
concentration and carrier lifetime, the above model can explain the actual photoresponse
spectra.
Keywords: CdTe thin-film, CdTe Schottky diode, surface recombination, spectral
response.
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