Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 10 N 4

Development of high-stable contact systems to gallium nitride microwave diodes
A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, L.M. Kapitanchuk, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, V.N. Sheremet, Yu.N. Sveshnikov
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 001-008.
Abstract | Full text (PDF)

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons
A.P. Dolgolenko, M.D. Varentsov, G.P. Gaidar*, P.G. Litovchenko
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 009-014.
Abstract | Full text (PDF)

Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
E.V. Grushko, O.L. Maslyanchuk, X. Mathew, V.V. Motushchuk, L.A. Kosyachenko, E.A. Streltsov
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 015-020.
Abstract | Full text (PDF)

Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering
L. Khomenkova, N. Korsunska, M. Sheinkman, T. Stara
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 021-025.
Abstract | Full text (PDF)

Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering
L. Khomenkova, N. Korsunska, M. Sheinkman, T. Stara
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 021-025.
Abstract | Full text (PDF)

Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 026-030.
Abstract | Full text (PDF)

Features of main band parameters for crystalline modification of Cd3As2 without center of symmetry
G.P.Chuiko, O.V.Dvornik
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 031-035.
Abstract | Full text (PDF)

The influence of size effects on thin films local piezoelectric response of thin films
A.N. Morozovska, S.V. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 036-041.
Abstract | Full text (PDF)

Spin polarization in semimagnetic semiconductor two barrier spin filters
S. B. Lev, V. I. Sugakov, G. V. Vertsimakha
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 042-046.
Abstract | Full text (PDF)

HgCdTe quantum wells grown by molecular beam epitaxy
S.A.Dvoretsky, D.G.Ikusov. Z.D.Kvon, N.N.Mikhailov, V.G.Remesnik, R.N.Smirnov, Yu.G.Sidorov, V.A.Shvets
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 047-053.
Abstract | Full text (PDF)

Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields
G.I. Syngaivska, V.V.Korotyeyev
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 054-059.
Abstract | Full text (PDF)

Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures
A.V. Sachenko, I. O Sokolovskyi, A. Kazakevitch, A.I. Shkrebtii, F. Gaspari
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 060-066.
Abstract | Full text (PDF)

Radiative recombination of the PVK/C60 molecular complexes with the radiation damages
.S. bus, .P. Dmytrenko, N.P. Kulish, Yu.I. Prylutskyy, N.. Belyy, V.G. Syromyatnikov, S.L. Studzinskyy, .. Zabolotnyy, D.. Gryn'ko, D.V. Shchur, V.V. Shlapatskaya
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 067-071.
Abstract | Full text (PDF)

Photoconductivity in macroporous silicon with regular structure of macropores
V.I. Ivanov, L.A. Karachevtseva, N.I. Karas, O.A. Lytvynenko, K.A. Parshin, A.V. Sachenko
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 072-076.
Abstract | Full text (PDF)

Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors
K.O. Popovych
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 077-080.
Abstract | Full text (PDF)

Cluster morphology silicon's nanoparticle
V.V Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 081-086.
Abstract | Full text (PDF)

Analysis of methods for high-speed forming the relief microimages on metallic substrates
A.A. Kryuchin, A.V. Pankratova, I.A. Kassko, F.V.Nagorny, D.V.Chirkov
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 087-093.
Abstract | Full text (PDF)

Coherent thermal radiation of Fabry-Perot resonator structures
O.G. Kollyukh, V.P. Kyslyi, A.I. Liptuga, V. Morozhenko, V.I. Pipa, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.4. P. 094-102.
Abstract | Full text (PDF)