|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 4. P. 021-025.
Chemical composition and light emission properties
of Si-rich-SiOx layers prepared by magnetron sputtering
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
45, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. The process of thermal decomposition of SiO x layers prepared by magnetron
sputtering is studied with the use of photoluminescence and Auger and SIMS
spectroscopies. From these measurements, we obtained the distributions of the emission
properties and the chemical composition over the depth. The effect of the redistribution
of silicon and oxygen over the depth is found after the high-temperature annealing which
results in the formation of a Si nanocrystal. These redistributions result in the appearance
of a Si-depleted region near the layer-substrate interface. The formation of a depletion
layer is dependent on the excess of Si. A decrease of the silicon content over the depth of
annealed layers is accompanied by a decrease of the Si nanocrystal size, as it is
evidenced by the blue shift of the photoluminescence maximum. The mechanism of
decomposition of SiO x and the possible reasons for the appearance of a Si-depleted
region are discussed.
Keywords: chemical composition, photoluminescence, SiO x layer, emission properties.
| ||