Semiconductor Physics, Quantum Electronics and Optoelectronics, 10 (4) P. 026-030 (2007).
DOI:
https://doi.org/10.15407/spqeo10.04.026
References
1. B.T. Bublik, M.I. Voronova, A.V. Markov, K.D. Scherbachov // Crystallography Reports 45(5), p. 893-898 (2000). https://doi.org/10.1134/1.1312929 | | 2. Z.-Q. Fang, G.C. Reynolds, D.C. Looc, N.G. Paraskevopoulos, T.E. Anderson, R.L. Jones // J. Appl. Phys. 83 (1), p. 260-265 (1998). https://doi.org/10.1063/1.366680 | | 3. N.М. Litovchenko, А.V. Prokhorovich, О.N. Stril'- chuk et al. // Оptoelectronika Poluprov. Tekhnika 38, р. 302-305 (2003) (in Russian). | | 4. V.F. Kovalenko, М.B. Litvinova, V.А. Krasnov // Ibid. 37, р. 202-208 (2002) (in Russian). | | 5. М.B. Litvinova, A.D. Shtan'ko // Ibid. 40, р. 228- 233 (2005) (in Russian). | | 6. М.G. Мil'vidskii, V.B. Osvennskii, Structural Defects in Semiconductor Single Crystals. Metallurgiya, Moscow, 1984 (in Russian). | | 7. V.V. Voronkov, А.U. Bol'sheva, R.I. Glorizova, L.I. Kolesnik, О.G. Stolyarov // Crystallography Reports 32(1), p. 208-212 (1987). | | 8. G.P. Peka, V.F. Kovalenko, V.N. Kutsеnkо, Luminescent Methods of Control over the Parameters of Semiconductor Materials and Devices. Тekhnika, Kyiv, 1986 (in Russian). | | 9. К.D. Glinchuk, V.I. Hуrоshеv, А.V. Prokhorovich // Оptoelectronika Poluprovodnikovaya Tekhnika 24, p. 66-86 (1992) (in Russian). | | 10. V.I. Nikitenko, Strain change in flat junctions of silicon with metals / In: Strain and Dislocations in Semiconductors. Acad. of Sci. of USSR, Moscow, 1962 (in Russian). | | 11. K.D. Glinchuk, N.M. Litovchenko, A.V. Prokhorovich, O.N. Stril'chuk // Semiconductors 35(4), p. 384-386 (2001). https://doi.org/10.1134/1.1365179 | | 12. F.S. Shishiуany, Diffusion and Degradation in Semiconductor Materials and Devices. Stiintsa, Kishinev, 1978 (in Russian). | | 13. K.D. Glinchuk, A.V. Prokhorovich, F.M. Vorobkalo // Cryst. Research Technol. 31(8), p. 1045-1049 (1996). https://doi.org/10.1002/crat.2170310813 | |
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