Semiconductor Physics, Quantum Electronics and Optoelectronics, 10 (4) P. 026-030 (2007).
DOI: https://doi.org/10.15407/spqeo10.04.026


References

1. B.T. Bublik, M.I. Voronova, A.V. Markov, K.D. Scherbachov // Crystallography Reports 45(5), p. 893-898 (2000).
https://doi.org/10.1134/1.1312929
2. Z.-Q. Fang, G.C. Reynolds, D.C. Looc, N.G. Paraskevopoulos, T.E. Anderson, R.L. Jones // J. Appl. Phys. 83 (1), p. 260-265 (1998).
https://doi.org/10.1063/1.366680
3. N.М. Litovchenko, А.V. Prokhorovich, О.N. Stril'- chuk et al. // Оptoelectronika Poluprov. Tekhnika 38, р. 302-305 (2003) (in Russian).
4. V.F. Kovalenko, М.B. Litvinova, V.А. Krasnov // Ibid. 37, р. 202-208 (2002) (in Russian).
5. М.B. Litvinova, A.D. Shtan'ko // Ibid. 40, р. 228- 233 (2005) (in Russian).
6. М.G. Мil'vidskii, V.B. Osvennskii, Structural Defects in Semiconductor Single Crystals. Metallurgiya, Moscow, 1984 (in Russian).
7. V.V. Voronkov, А.U. Bol'sheva, R.I. Glorizova, L.I. Kolesnik, О.G. Stolyarov // Crystallography Reports 32(1), p. 208-212 (1987).
8. G.P. Peka, V.F. Kovalenko, V.N. Kutsеnkо, Luminescent Methods of Control over the Parameters of Semiconductor Materials and Devices. Тekhnika, Kyiv, 1986 (in Russian).
9. К.D. Glinchuk, V.I. Hуrоshеv, А.V. Prokhorovich // Оptoelectronika Poluprovodnikovaya Tekhnika 24, p. 66-86 (1992) (in Russian).
10. V.I. Nikitenko, Strain change in flat junctions of silicon with metals / In: Strain and Dislocations in Semiconductors. Acad. of Sci. of USSR, Moscow, 1962 (in Russian).
11. K.D. Glinchuk, N.M. Litovchenko, A.V. Prokhorovich, O.N. Stril'chuk // Semiconductors 35(4), p. 384-386 (2001).
https://doi.org/10.1134/1.1365179
12. F.S. Shishiуany, Diffusion and Degradation in Semiconductor Materials and Devices. Stiintsa, Kishinev, 1978 (in Russian).
13. K.D. Glinchuk, A.V. Prokhorovich, F.M. Vorobkalo // Cryst. Research Technol. 31(8), p. 1045-1049 (1996).
https://doi.org/10.1002/crat.2170310813