Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 4. P. 026-030.
https://doi.org/10.15407/spqeo10.04.026

Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
S.V. Shutov1, A.D. Shtan’ko2, V.V. Kurak2, M.B. Litvinova3

1V. Lashkaryov Institute of Semiconductor Physics 41, prospect Nauky, 03028 Kyiv, Ukraine, Fax: 38(0552) 515457 , е-mail: shutov_sv@mail.ru
2Kherson National Technical University, 24, Beryslavske Sh., 73008 Kherson, Ukraine Phone: 38(0552) 515457, 38(0552) 516468
3National University of Shipbuilding, 44, prospect Ushakova, 73022 Kherson, Ukraine Fax: 38(0552) 263118, е-mail: lmb@ist.com.ua

Abstract. The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is revealed.

Keywords: gallium arsenide single crystal, annealing, point defect, vacancy.

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