|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 4. P. 060-066.
Modeling of photoconversion efficiency
for hydrogenated amorphous Si p-i-n structures
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine
Abstract. An analytical formalism to optimize the photoconversion efficiency η of
hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This
model allows firstly the optimization of a p + -i-n sandwich in terms of carrier mobilities,
thickness of the layers, doping levels, and others. Second, the geometry of grid fingers
that conduct the photocurrent to the bus bars and ITO/SiO 2 layers has been optimized,
and the effect of non-zero incidence angles of Sun’s light has been included as well. The
optimization method has been applied to typical a-Si:H solar cells. The codes allow the
optimization of amorphous Si based solar cells in a wide range of parameters and are
available on the e-mail request.
Keywords: photoconversion efficiency, hydrogenated amorphous silicon, a-Si:H solar
cell.
| ||