Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 4. P. 072-076.

Photoconductivity in macroporous silicon with regular structure of macropores
V.I. Ivanov, L.A. Karachevtseva, N.I. Karas, O.A. Lytvynenko, K.A. Parshin, and A.V. Sachenko

V. Lashkaryov Institute of Semiconductor Physics, 45, prospect Nauky, 03028 Kyiv, Ukraine Phone: 525 9815, fax: 525 8243, e-mail:

Abstract. The effects of the increase of photoconductivity in periodic macroporous silicon structures depending on the size and period of cylindrical macropores are investigated. It is obtained that the ratio of macroporous silicon photoconductivity to bulk silicon photoconductivity achieves a maximum at the distance between macropores equal to two thicknesses of the Schottky layer, which corresponds to the experimental data. The increase of photoconductivity is due to both the large total surface area of macropores and the existence of Schottky layers in the near-surface region of cylindrical macropores.

Keywords: macroporous silicon, photoconductivity, Schottky layer.

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