Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 4. P. 077-080.

Degradation processes in encapsulated ZnS:Cu powder electroluminescent phosphors
K.O. Popovych

Uzhgorod National University, 46, Pidhirna str., 88000 Uzhgorod, Ukraine E-mail:

Abstract. In this paper we present experimental results of the studying degradation processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder phosphors and theoretical simulation of energy parameters for the phosphor. Energy band diagrams ZnS, Cu 2 S, ZnS-Cu 2-x S heterojunction and Cu-ZnS metal-semiconductor junction have been constructed and cohesive energies for Zn-S, Cu-S, Zn-O, Cu-O and Zn-Cu bonds have been calculated by the method based on a linear combination of atomic orbitals and pseudo-potential. Time dependences of brightness have been found to adequately fit a two-component exponential dependence. The first part of the exponential curve has been attributed to the diffusion processes taking place in Cu 2-x S, and the second one to the diffusion of Cu in ZnS matrix.

Keywords: electroluminescence, ZnS:Cu powder phosphor, degradation, heterostructure, electronic structure, cohesive energy.

Full Text (PDF)

Back to N4 Volume 10