Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 4. P. 319-323.
https://doi.org/10.15407/spqeo11.04.319


Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
A.N. Nazarov, I.N. Osiyuk , S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy V.N. Torbin, V.V. Omelchuk, T.M. Nazarova*, L.Rebohle**, W.Skorupa**

V.E. Lashkarev Institute of Semiconductor Physics NAS Ukraine,45, prospekt Nauki,03028 Kiev, Ukraine
*National Technical University “KPI”,37, prospekt Peremogy,03056 Kyiv, Ukraine
**Institute of Ion Beam Physics and Materials Research, Forschungzentrum Rossendorf e.V., POB 510119, D-01314, Dresden, Germany

Abstract. In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO 2 layers co-implanted with Si + and C + ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on electroluminescent and durability of SiO 2 (Si,C) - Si-system is studied. Combined measurements of charge trapping and EL intensity as a function of the injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence. EL was demonstrated to have defect-related nature. Cross sections of both electron traps and hole traps were determined. EL quenching at a great levels of injected charge is associated with strong negative charge capture, following capture of positive charge leading to electrical breakdown of SiO 2 structures.

Keywords: electroluminescence, MOS – structure, implantation, EL quenching.

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