Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 11 N 4

The features of structural-impurity ordering of interfaces in Ta2O5-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment
E.Yu. Kolyadina, R.V. Konakova, L.A. Matveeva, V.F. Mitin, V.V. Shynkarenko, E. Atanassova
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 311-318.
Abstract | Full text (PDF)

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
A.N. Nazarov, I.N. Osiyuk , S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy , V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L.Rebohle, W.Skorupa
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 319-323.
Abstract | Full text (PDF)

Novel hysteresis effect in ultrathin epitaxial Gd2O3 high-k dielectric
A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, V. S. Lysenko, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, and H. J. Ostenc
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 324-328.
Abstract | Full text (PDF)

Factor of interfacial potential for the surface plasmon-polariton resonance sensor response
A. M. Lopatynskyi, O. G. Lopatynska, L. V. Poperenko, V. I. Chegel
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 329-336.
Abstract | Full text (PDF)

Dielectric studies of dispersions of carbon nanotubes in liquid crystal 5CB
A. Koval'chuk, L. Dolgov, O. Yaroshchuk
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 337-341.
Abstract | Full text (PDF)

Effect of La3+ ions on the habit of KDP crystals
S. Javidi, M. Esmaeil Nia, N. Aliakbari, F. Taheri
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 342-344.
Abstract | Full text (PDF)

Features of the super prism effect in multilayer dielectric coatings
Yu.O. Pervak, V.M.Onitchuk and V.Yu. Pervak
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 345-351.
Abstract | Full text (PDF)

Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO2 matrix
I. Khatsevich, V. Melnik, V. Popov, B. Romanyuk, V. Fedulov
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 352-355.
Abstract | Full text (PDF)

Hall mobility of charge carriers in films of semiconductors formed on porous silicon
H.A. Hasanov, M.I. Murguzov
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 356-359.
Abstract | Full text (PDF)

Raman threshold and optical gain bandwidth in silica fibers
G.S.Felinskyi, P.A.Korotkov
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 360-363.
Abstract | Full text (PDF)

Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells
L. O. Lokot
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 364-369.
Abstract | Full text (PDF)

Polar properties and local piezoelectric response of ferroelectric nanotubes
Anna N. Morozovska, George S. Svechnikov, Eugene I. Shiskin, Vladimir Y. Shur
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 370-380.
Abstract | Full text (PDF)

The influence of H2S and H2 adsorption on characteristics of MIS structures with Si porous layers
V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh,
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 381-384.
Abstract | Full text (PDF)

Dynamics of acoustic emission in light-emitting 35> structures
Vlasenko A.I., Lyashenko O.V., Veleschuk V.P., Kisseluk M.P.
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 385-391.
Abstract | Full text (PDF)

Ordered Carbon Nanotubes and Globular Opals As a Model of Multiscaling Photonic Crystals
G. Dovbeshko, O. Fesenko, V. Moiseyenko, V. Gorelik, V. Boyko and V. Sobolev
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 392-395.
Abstract | Full text (PDF)

Optical properties of diamond-like carbon films subjected to ultraviolet irradiation
N.I.Klyui, V.G.Litovchenko, A.N.Lukyanov, A.N.Klyui
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 396-400.
Abstract | Full text (PDF)

Author Index 2008
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.4. P. 401-407.
Full text (PDF)