Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 4. P. 324-328.
https://doi.org/10.15407/spqeo11.04.324

Novel hysteresis effect in ultrathin epitaxial Gd2O3 high-k dielectric
A. N. Nazarov1, Y. V. Gomeniuk1, Y. Y. Gomeniuk1, V. S. Lysenko1, H. D. B. Gottlob2, M. Schmidt2, M. C. Lemme2, M. Czernohorsky3, H. J. Osten3

1V. E. Lashkaryov Institute of Semiconductor Physics, NASU, 03028 Kyiv, Ukraine
2Advanced Microelectronic Center Aachen, AMO GmbH, 52074 Aachen, Germany
3Institute of Electronic Materials and Devices, Leibniz University Hannover, 30167 Hannover, Germany Corresponding author. Phone +380445256262, Fax +380445256177, Email: yurigom@lab15.kiev.ua

Abstract. Charge trapping in ultrathin high-k Gd 2 O 3 dielectric leading to appearance of hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and current-voltage techniques at different temperatures. It was shown that the large leakage current at a negative gate voltage causes the reversible trapping of the positive charge in the dielectric layer, without electrical degradation of the dielectric and dielectric- semiconductor interface. The capture cross-sections of the hole traps are around 10 –18 and 2 × 10 –20 cm 2 . The respective shift of the C–V curve correlates with a “plateau” at the capacitance corresponding to weak accumulation at the silicon interface.

Keywords: high-k dielectric, dielectric-semiconductor interface.

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