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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 4. P. 356-359.
Hall mobility of charge carriers in films of (PbX)1-x(Sm2X3)x
semiconductors formed on porous silicon
Azerbaijan State Pedagogical University, Department of Physics
34, Uzeyir Hacibeyov str., Baku, AZ -1095, Azerbaijan
E-mail: hummat.hasanov@gmail.com
Abstract. Presented paper is devoted to studying the methods to prepare epitaxial films
of x 3 2 x 1 ) X (Sm (PbX) − (X – S, Se, Te; x = 0.04) semiconductors and to examine the
Hall mobility of charge carriers in these films. It is revealed that the derived dependences
) ( μ H T for the samples on values of the exponential coefficient ν = 1.7-2.8 testify the
temperature course of mobility in the majority of samples and can be explained via the
dispersion of acoustic oscillations in the lattice and presence of a temperature
dependence on the effective mass.
Keywords: chalcogenide film, porous silicon, Hall mobility, polycrystalline
semiconductor films.
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