Semiconductor Physics, Quantum Electronics and Optoelectronics, 11 (4) P. 381-384 (2008).
DOI:
https://doi.org/10.15407/spqeo11.04.381
References
1. D.I. Bilenko, N.P. Abanshin, Yu.N. Galishnikova, G.E. Markelova, I.B. Mysenko, E.I. Khasina, Electrophysical and optical properties of porous silicon // Semiconductors 11, p. 2090-2092 (1983). | | 2. N. Foucaran, F. Pascal-Delannoy, A. Giani, A. Sackda, P. Combette, A. Boyer, Porous silicon layers used for gas sensor applications // Thin Solid Films 297, p. 317-320 (1997). https://doi.org/10.1016/S0040-6090(96)09437-0 | | 3. L. Seals, L.A. Tse, P.J. Hesketh, J.L. Gole, Rapid, reversible, sensitive porous silicon gas sensor // J. Appl. Phys. 91, p. 2519-2523 (2002). https://doi.org/10.1063/1.1436556 | | 4. V.G. Litovchenko, T.I. Gorbanyuk, V.S. Solntsev, A.A. Evtukh, Mechanism of hydrogen containing and oxygen molecules sensing by Pd- or Cu/Pdporous Si-Si structures // Appl. Surf. Sci. 234, p. 262 (2004). https://doi.org/10.1016/j.apsusc.2004.05.146 | | 5. S.E. Lewis, J.R. DeBoer, J.L. Gole, P.J. Hesketh, Sensitive, selective, and analytical improvements to a porous silicon gas sensor // Sensors and Actuators B 110, p. 54-65 (2005). https://doi.org/10.1016/j.snb.2005.01.014 | | 6. E.A. Tutov, E.N. Bormontov, V.M. Kashkarov, M.N. Pavlenko and E.L. Domashevskaya. Influence of the adsorption of water vapour on the capacitance-voltage characteristics of heterostructures with porous silicon // Zhurnal tekhnich. fiziki 73 (11), p. 83-89 (2003) (in Russian). https://doi.org/10.1134/1.1626777 | | 7. E. Galeazzo, H.E.M. Peres, G. Santos, N. Peixoto, F.J. Ramirez-Fernandez, Gas sensitive porous silicon devices: responses to organic vapors // Sensors and Actuators B 93, p. 384-390 (2003). https://doi.org/10.1016/S0925-4005(03)00200-4 | | 8. Finny P. Mathew, Evangelyn C. Alocilja, Porous silicon-based biosensor for pathogen detection // Biosensors and Bioelectronics 20, p. 1656-1661 (2005). https://doi.org/10.1016/j.bios.2004.08.006 | | 9. S. Khoshnevis, R.S. Dariani, M.E. Azim-Araghi, Z. Bayindir, K. Robbie, Observation of oxygen gas effect on porous silicon-based sensors // Thin Solid Films 515, p. 2650-2654 (2006). https://doi.org/10.1016/j.tsf.2006.05.044 | | 10. V.M. Demidovich, G.B. Demidovich, E.I. Dobrenkova, S.N. Kozlov, Porous silicon adsorption sensitive diode // Pis'ma zhurnal experiment. teor. fiziki 18 (14), p. 57-59 (1992) (in Russian). | | 11. A.A. Kovalevskiy, I.L. Baranov, Y.P. Snitovskiy, Influence of implanted palladium in porous silicon on the sensitivity of sensor elements // Mikroelektronika 25 (4), p. 295-297 (1996) (in Russian). | | 12. V. Polishchuk, E. Souteyrand, J.R. Martin, V.I. Strikha, V.A. Skryshevsky, A study of hydrogen detection with palladium modified porous silicon // Analytica chimica acta 375, p. 205-210 (1998). https://doi.org/10.1016/S0003-2670(98)00311-0 | | 13. S.V. Slobodchikov, D.N. Goryachev, Ch.M. Salischov, O.M. Sreseli, Electrical and photoelectrical characteristics of the diode structures of n-Si/porous Si/Pd and influence of gaseous hydrogen on them // Semiconductors 33 (3), p. 340- 343 (1999). https://doi.org/10.1134/1.1187893 | | 14. R. Angelucci, A. Poggi, L. Dori, A. Tagliani, G.C. Cardinali, F. Corticelli, M. Marisaldi, Permeated porous silicon for hydrocarbon sensor fabrication // Sensors and Actuators A: Physical 74 (1), p. 95-99 (1999). https://doi.org/10.1016/S0924-4247(98)00328-8 | | 15. C. Baratto, G. Sberveglieri, E. Comini et al., Goldcatalyzed porous silicon for NOx sensing // Sensors and Actuators B 68 (1), p. 74-80 (2000). https://doi.org/10.1016/S0925-4005(00)00464-0 | | 16. L. Quercia, F. Cerullo, V. La Ferrara, G. Di Francia, C. Baratto, G. Fagilia, Fabrication and characterization of a sensing device based on porous silicon // Рhysica status solidi (a) 182 (1), p. 473-477 (2000). https://doi.org/10.1002/1521-396X(200011)182:1<473::AID-PSSA473>3.0.CO;2-K | | 17. M.P. Stewart, J.M. Buriak, Chemical and biological applications of porous silicon technology // Adv. Mater. 12, p. 859-869 (2000). https://doi.org/10.1002/1521-4095(200006)12:12<859::AID-ADMA859>3.0.CO;2-0 | | 18. D.I. Bilenko, O.Y. Belobrovoya, E.A. Jarkova, I.B. Mysenko, E.I. Khasina, Influence of adsorption on electrophysical properties of structures based on oxidized porous silicon // Semiconductors 36 (4), p. 490-495 (2002). https://doi.org/10.1134/1.1469197 | | 19. J.W.P. Bakker, H. Arwin, G. Wang, K. Järrendahl, Improvement of porous silicon based gas sensors by polymer modification // Physica status solidi (a) 197 (2), р. 378-381 (2003). https://doi.org/10.1002/pssa.200306529 | | 20. L. Pancheri, C.J. Oton, Z. Gaburro, G. Soncini, L. Pavesi, Very sensitive porous silicon NO2 sensor // Sensors and Actuators B 89, p. 237-239 (2003). https://doi.org/10.1016/S0925-4005(02)00471-9 | | 21. S. Belhousse, N. Gabouze, H. Cheraga, K. Henda, CHx/PS/Si as structure for propane sensing // Thin Solid Films 482, p. 253-257 (2005). https://doi.org/10.1016/j.tsf.2004.11.155 | | 22. V.A. Skryshevsky, I.V. Gavrilchenko, G.V. Kuznetsov, S.A. Dyachenko, Influence of the adsorption of alcohol and water vapours on the currentvoltage characteristics of MIS structure with intermediary layer of porous silicon // Ukr. fizichny zhurnal 51 (5), p. 460-466 (2006) (in Ukrainian). | | 23. V.M. Arakelyan, V.E. Galstyan, Kh.S. Martirosyan, G.E. Shahnazaryan, V.M. Aroutiounian, P.G. Soukiassian, Hydrogen sensitive gas sensor based on porous silicon/TiO2-x structure // Physica E 38 (1-2), p. 219-221 (2007). https://doi.org/10.1016/j.physe.2006.12.037 | | 24. T.I. Gorbanyuk, A.A. Evtukh, V.G. Litovchenko and V.S. Solntsev, Nanoporous silicon doped by Cu for gas-sensing applications // Physica E: Lowdimensional Systems and Nanostructures 38, p. 211 (2007). https://doi.org/10.1016/j.physe.2006.12.038 | |
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