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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 4. P. 381-384.
Influence of H 2 S and H 2 adsorption on characteristics
of MIS structures with Si porous layers
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 45, prospect Nauky, 03028 Kyiv, e-mail: sensor@isp.kiev.ua Abstract. The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н 2 , H 2 S) at the room temperature is studied. The kinetic dependences of the change in output signals of the samples upon action of different concentrations of gas molecules are studied using the capacitance- voltage characteristic method. The isotherms of adsorption are derived. A physical model of the adsorption of hydrogen containing gases in these structures is proposed to explain the observed phenomena. Keywords: adsorboelectric effect, porous silicon, MIS gas sensor.
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