Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 4. P. 381-384.
https://doi.org/10.15407/spqeo11.04.381


Influence of H 2 S and H 2 adsorption on characteristics of MIS structures with Si porous layers
V.S. Solntsev, V.G. Litovchenko, T.I. Gorbanyuk, A.A. Evtukh

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 45, prospect Nauky, 03028 Kyiv, e-mail: sensor@isp.kiev.ua

Abstract. The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н 2 , H 2 S) at the room temperature is studied. The kinetic dependences of the change in output signals of the samples upon action of different concentrations of gas molecules are studied using the capacitance- voltage characteristic method. The isotherms of adsorption are derived. A physical model of the adsorption of hydrogen containing gases in these structures is proposed to explain the observed phenomena.

Keywords: adsorboelectric effect, porous silicon, MIS gas sensor.

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