Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 4. P. 385-391.
https://doi.org/10.15407/spqeo11.04.385

Dynamics of acoustic emission in light-emitting A3B5 structures
A.I. Vlasenko1, O.V. Lyashenko2, V.P. Veleschuk1, M.P. Kisseluk1

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine. 41 prospect Nauky 03028, Kyiv, Ukraine. Phone +38044-5258437, E-mail: vvvit@ukr.net
2Taras Shevchenko Kyiv National University, 2 Academician Glushkov Ave., 03022, Kyiv, Ukraine; E-mail: lyashenk@mail.univ.kiev.ua

Abstract. In light-emitting А 3 В 5 structures, a correlation between the process of acoustic emission (AE) occurrence and fluctuations of the electroluminescence intensity and current has been revealed, which indicates a common mechanism of their origin. It has been shown that in these structures, including InGaN/GaN structures with quantum wells, the probable reason of it is the consecutions of physical processes leading to correlation of three various pulse sequences. Revealed is the presence of several activation mechanisms (sources) of АЕ, which are corresponded by various scenarios and physical processes of local reorganization of material structure with different values of the activation energy.

Keywords: acoustic emission, electroluminescence, fluctuation, light-emitting structures

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