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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 4. P. 324-327.
On methodology of measuring parameters with the increased
sensitivity to residual or irradiation induced inhomogeneities
in semiconductors
Institute for Nuclear Researches, NAS of Ukraine 47, prospect Nauky, 03680 Kyiv, Ukraine; e-mail: gaidar@kinr.kiev.ua Abstract. Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for many- valley semiconductors, n-Ge and n-Si. The aspect ratio between values of the saturated specific resistance strain ) ( X for strain and analogous value for axial pressure deformation pressure ) ( X was determined. It gives a possibility to obtain reliable information concerning the value strain ) ( X even for the case when mobility of carriers and, consequently, the value = (Х) are significantly decreased, for example, under irradiation treatment of crystals. Keywords: many-valley semiconductors, piezoresistance, mechanical stress, axial pressure, strain, parameter of scattering anisotropy.
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