Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics     SPQEO

Local plasmons contribution into photocurrent of Au/GaAs surface barrier structure with Au nanoparticles on interface
S. Mamykin, N. Dmitruk, A. Korovin, D. Naumenko, A. Dmytruk, Yeon-Su Park
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 315-320.
Abstract | Full text (PDF)

Synthesis and luminescent properties of SrTiO₃:Pr³⁺ phosphors prepared by sol-gel method
O.M. Marchylo, L.V. Zavjalova, Y. Nakanishi, H. Kominami, K. Hara, A.E. Belyaev, G.S. Svechnikov, L.I. Fenenko, V.I. Poludin
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 321-323.
Abstract | Full text (PDF)

On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors
G.P. Gaidar
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 324-327.
Abstract | Full text (PDF)

Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN
V.V. Korotyeyev, G.I. Syngayivska, V.A. Kochelap and A.A. Klimov
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 328-338.
Abstract | Full text (PDF)

A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 339-342.
Abstract | Full text (PDF)

The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
O.Yu. Semchuk, O.I. Gichan, L.G. Grechko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 343-348.
Abstract | Full text (PDF)

Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect
I.I. Boiko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 349-356.
Abstract | Full text (PDF)

Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge_1-xSi_x heterostructure
Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 357-361.
Abstract | Full text (PDF)

Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures
N.A. Vlasenko, P.F. Oleksenko, M.A. Mukhlyo, L.I. Veligura, and Z.L. Denisova
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 362-365.
Abstract | Full text (PDF)

Influence of polarization of semiconductor lattice on its optical vibration spectrum
V.S. Severin
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 366-369.
Abstract | Full text (PDF)

Fine structure of NQR spectra in GaSe
Z.D. Kovalyuk, G.I. Lastivka, O.G. Khandozhko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 370-374.
Abstract | Full text (PDF)

Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si-Fz
V.M. Babych, Ja.M. Olikh, M.D. Tymochko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 375-378.
Abstract | Full text (PDF)

Investigation of singularities inherent to Mueller matrix images of biological crystals: diagnostics of their birefringent structure
I.Z.Misevitch, Yu.O. Ushenko, O.G. Pridiy, A.V.Motrich, Yu.Ya. Tomka, O.V. Dubolazov
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 379-390.
Abstract | Full text (PDF)

Wavelet analysis for Mueller matrix images of biological crystal networks
Yu.O. Ushenko, Yu.Ya. Tomka, O.G. Pridiy, A.V.Motrich, O.V. Dubolazov, I.Z. Misevitch, V.V. Istratiy
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 391-398.
Abstract | Full text (PDF)

Analysis of properties of optical carriers after long-term storage
V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 399-402.
Abstract | Full text (PDF)

Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation
Roman Burbelo, Mykola Isaiev, Andrey Kuzmich
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 403-405.
Abstract | Full text (PDF)

Thin silicon solar cells with SiO_x/SiN_x Bragg mirror rear surface reflector
I.I. Ivanov, T.V. Nychyporuk, V.A. Skryshevsky, M. Lemiti
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 406-411.
Abstract | Full text (PDF)

Thermodynamics analysis of defects created processes in the crystals of cadmium telluride in the conditions of high temperature annealing
V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 412-416.
Abstract | Full text (PDF)

Two-dimensional modeling the static parameters for a submicron field-effect transistor
M. Zaabat, M. Draid
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 417-420.
Abstract | Full text (PDF)

Stacking Faults in the single crystals
Mihr M. Vora, Aditya M. Vora
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 421-423.
Abstract | Full text (PDF)

Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width
Emad Hameed Hussein
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 424-428.
Abstract | Full text (PDF)

Author Index 2009
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 429-437.
Full text (PDF)

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