Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 12 N 4

Local plasmons contribution into photocurrent of Au/GaAs surface barrier structure with Au nanoparticles on interface
S. Mamykin, N. Dmitruk, A. Korovin, D. Naumenko, A. Dmytruk, Yeon-Su Park
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 315-320.
Abstract | Full text (PDF)

Synthesis and luminescent properties of SrTiO3:Pr3+ phosphors prepared by sol-gel method
O.M. Marchylo, L.V. Zavjalova, Y. Nakanishi, H. Kominami, K. Hara, A.E. Belyaev, G.S. Svechnikov, L.I. Fenenko, V.I. Poludin
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 321-323.
Abstract | Full text (PDF)

On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors
G.P. Gaidar
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 324-327.
Abstract | Full text (PDF)

Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN
V.V. Korotyeyev, G.I. Syngayivska, V.A. Kochelap and A.A. Klimov
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 328-338.
Abstract | Full text (PDF)

A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base
V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 339-342.
Abstract | Full text (PDF)

The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors
O.Yu. Semchuk, .. Gichan, L.G. Grechko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 343-348.
Abstract | Full text (PDF)

Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect
I.I. Boiko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 349-356.
Abstract | Full text (PDF)

Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge1-xSix heterostructure
Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 357-361.
Abstract | Full text (PDF)

Stimulated emission of Cr2+ ions in ZnS:Cr thin-film electroluminescent structures
N.A. Vlasenko, P.F. Oleksenko, M.A. Mukhlyo, L.I. Veligura, and Z.L. Denisova
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 362-365.
Abstract | Full text (PDF)

Influence of polarization of semiconductor lattice on its optical vibration spectrum
V.S. Severin
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 366-369.
Abstract | Full text (PDF)

Fine structure of NQR spectra in GaSe
Z.D. Kovalyuk, G.I. Lastivka, .G. Khandozhko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 370-374.
Abstract | Full text (PDF)

Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si-Fz
V.. Babych, Ja.. Olikh, M.D. Tymochko
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 375-378.
Abstract | Full text (PDF)

Investigation of singularities inherent to Mueller matrix images of biological crystals: diagnostics of their birefringent structure
I.Z.Misevitch, Yu.O. Ushenko, O.G. Pridiy, A.V.Motrich, Yu.Ya. Tomka, O.V. Dubolazov
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 379-390.
Abstract | Full text (PDF)

Wavelet analysis for Mueller matrix images of biological crystal networks
Yu.O. Ushenko, Yu.Ya. Tomka, O.G. Pridiy, A.V.Motrich, O.V. Dubolazov, I.Z. Misevitch, V.V. Istratiy
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 391-398.
Abstract | Full text (PDF)

Analysis of properties of optical carriers after long-term storage
V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 399-402.
Abstract | Full text (PDF)

Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation
Roman Burbelo, Mykola Isaiev, Andrey Kuzmich
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 403-405.
Abstract | Full text (PDF)

Thin silicon solar cells with Si/SiNx Bragg mirror rear surface reflector
I.I. Ivanov, T.V. Nychyporuk, V.A. Skryshevsky, M. Lemiti
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 406-411.
Abstract | Full text (PDF)

Thermodynamics analysis of defects created processes in the crystals of cadmium telluride in the conditions of high temperature annealing
V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 412-416.
Abstract | Full text (PDF)

Two-dimensional modeling the static parameters for a submicron field-effect transistor
M. Zaabat, M. Draid
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 417-420.
Abstract | Full text (PDF)

Stacking Faults in the single crystals
Stacking Faults in the single crystals
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 421-423.
Abstract | Full text (PDF)

Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width
Emad Hameed Hussein
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 424-428.
Abstract | Full text (PDF)

Author Index 2009
Semiconductor physics, quantum electronics and optoelectronics. 2009. V.12, N.4. P. 429-437.
Full text (PDF)