Semiconductor Physics, Quantum Electronics and Optoelectronics, 12 (4) P. 339-342 (2009).
DOI:
https://doi.org/10.15407/spqeo12.04.339
References
1. S.K. Cheung and N.W. Cheung, Extraction of Schottky diode parameters from forward currentvoltage characteristics // Appl. Phys. Lett. 49 (2), p. 85-87 (1986). https://doi.org/10.1063/1.97359 | | 2. T.C. Lee, S. Fung, C.D. Beling, and H.L. Au, A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes // J. Appl. Phys. 72 (10), p. 4739- 4742 (1992). https://doi.org/10.1063/1.352082 | | 3. V. Aubry and F. Meyer, Schottky diodes with high series resistance: Limitations of forward I-V methods // J. Appl. Phys. 76 (12), p. 7973-7984 (1994). https://doi.org/10.1063/1.357909 | | 4. M. Lyakas, R. Zaharia, and M. Eizenberg, Analysis of nonideal Schottky and p-n junction diodes - extraction of parameters from I-V plots // J. Appl. Phys. 78 (9), p. 5481-5489 (1995). https://doi.org/10.1063/1.359664 | | 5. V. Mikhelashvili, G. Eisenstein, V. Garber, S. Fainleib, G. Bahir, D. Ritter, M. Orenstein, and A. Peer, On the extraction of linear and nonlinear physical parameters in nonideal diodes // J. Appl. Phys. 85 (9), p. 6873-6883 (1999). https://doi.org/10.1063/1.370206 | | 6. A. Kaminski, J.J. Marchand, and A. Laugier, I-V methods to extract junction parameters with special emphasis on low series resistance // Solid-State Electron. 43 (4), p. 741-745 (1999). https://doi.org/10.1016/S0038-1101(98)00338-4 | | 7. C.-C. Liu, C.-Y. Chen, C.-Y. Weng, C.-C. Wang, F.-L. Jenq, P.-J. Cheng, Y.-H. Wang, and M.-P. Houng, Physical parameters extraction from current-voltage characteristic for diodes using multiple nonlinear regression analysis // Solid-State Electron. 52 (6), p. 839-843 (2008). https://doi.org/10.1016/j.sse.2007.12.010 | | 8. W. Jung and M. Guziewicz, Schottky diode parameters extraction using Lambert W function // Mater. Sci. Eng. B (2009), doi:10.1016 / j.mseb.2009.02.013. | | 9. A.I. Prokopyev and S.A. Mesheryakov, Fast extraction of static parameters of Schottky diodes from forward I-V characteristic // Measurement 37 (2), p. 149 -155 (2005). https://doi.org/10.1016/j.measurement.2004.11.008 | | 10. P. Dai, Y. Zhang, and P.M. Sarachik, Critical conductivity exponent for Si:B // Phys. Rev. Lett. 66 (4), p. 1914-1917 (1991). https://doi.org/10.1103/PhysRevLett.66.1914 | | 11. V.L. Borblik, Yu.M. Shwarts and M.M. Shwarts, Revealing the hopping mechanism of conduction in heavily doped silicon diodes // Semiconductor Physics, Quantum Electronics & Optoelectronics 8 (2), p. 41-44 (2005). https://doi.org/10.15407/spqeo8.02.041 | | 12. J.A. Del Alamo and R.M. Swanson, Forward-bias tunneling: a limitation to bipolar device scaling // IEEE Electron. Device Lett. EDL-7 (11), p. 629- 631 (1986). https://doi.org/10.1109/EDL.1986.26499 | | 13. J.-C. Manifacier and H.K. Henisch, Minoritycarrier injection into semiconductors // Phys. Rev.B 17 (6), p. 2640-2647 (1978). https://doi.org/10.1103/PhysRevB.17.2640 | | 14. Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, and L.I. Shpinar, Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures // Semiconductor Physics, Quantum Electronics & Optoelectronics 3 (3), p. 400-405 (2000). | |
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