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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 4. P. 339-342.
A new method of extraction of a p-n diode series resistance
from I-V characteristics and its application to analysis
of low-temperature conduction of the diode base
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044)525-6292, fax: +38(044)525-7463
Abstract. A new analytical method of extraction of a diode series resistance from
current-voltage characteristics is proposed which takes into account dependence of the
series resistance on voltage (or current). The method supposes a presence of linear
section in the diode current-voltage characteristic plotted in semi-logarithmic scale. This
method is applied here to experimental data for silicon diode in which series resistance is
caused by freezing-out free current carriers into impurities at cryogenic temperatures.
Character of dependence of the base resistance on electric field in the base layer
determined in such way confirms hopping nature of silicon conduction under these
conditions.
Keywords: junction diode, series resistance, silicon, metal-insulator transition, low
temperature, hopping conduction.
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