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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 4. P. 343-348.
The Rahman-Nat diffraction on a thin laser-induced grating
of the refractive index in semiconductors
A. Chuiko Institute of Surface Chemistry, NAS of Ukraine,
17, General Naumov str., 03164 Kyiv, Ukraine
Fax: (380-44)424-3567; e-mail: semchuk_oleksandr@isc.gov.ua
Abstract. Studied in this work is the Rahman-Nat diffraction on a thin grating of
refractive index in semiconductor, which was created by an interference pattern of two
coherent laser beams. Numeral calculations showed that the maximal diffraction
efficiency for the Rahman-Nat diffraction in the first order was 28.2 % for a purely phase
grating at its thickness z ~ 200, and 4.8 % for a purely amplitude grating. It was also
ascertained, that waves belonging to the nearby diffraction orders differ from each other
by π/2 in their phase.
Keywords: Rahman-Nat diffraction, refractive index, coherent laser beams, semi-
conductor, laser-induced grating, free carrier, phase grating, amplitude grating.
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