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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 4. P. 357-361.
Influence of electron irradiation on spectra of light electroreflection
from the surface of Ge/Ge1-xSix heterostructure
1Institute of Radiation Problems, Azerbaijan National Academy of Sciences
Abstract. In this work, the growth properties of Ge 1-x Si x epitaxial films grown on Ge
substrates were investigated. The structural perfection of the films was controlled by
electron diffraction, electron microscopic and X-ray diffraction methods. It has been
established that the surface structure of the sample Ge/Ge 1-x Si x changes after irradiation by
accelerated electrons Ф = 510 16 cm -2 , and generated are surface defects which play the
role of traps for change carriers.
Keywords: germanium-silicon alloy, epitaxial film, heterostructure, optical absorption,
electroreflection.
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