Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 4. P. 370-374.
https://doi.org/10.15407/spqeo12.04.370

Fine structure of NQR spectra in GaSe
Z.D. Kovalyuk1, G.I. Lastivka2, О.G. Khandozhko2

1Chernivtsi Department of the Institute of Materials Science Problems, NAS of Ukraine, 5, Iryna Vilde str., 58001 Chernivtsi, Ukraine, Phone:(0372)52-51-55, fax (0372) 23-60-18; e-mail: chimsp@ukrpost.ua
2Yu. Fed’kovych Chernivtsi National University, 2, Kotsyubyns’ky str., 58012 Chernivtsi, Ukraine, Phone:(0372)24-24-36, fax (0372) 24-24-36; e-mail: rt-dpt@chnu.cv.ua

Abstract. Peculiarities of the observation of nuclear quadrupole resonance (NQR) in GaSe crystals grown from melt are under investigations. The splitting of a resonance NQR line by two identical spectra is caused by the availability of non-equivalent positions of Ga atoms in the polytypes ,  and, probably, . The appearance of a fine structure in NQR spectra is related to ordering in the system of the lattice defects (polytypes), when the atomic Se-Ga-Ga-Se layers are stacked during the crystal growth.

Keywords: nuclear quadrupole resonance, layer semiconductor, fine structure of spectra, polytype.

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