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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 4. P. 399-402.
Analysis of properties of optical carriers after long-term storage
1Institute for information recording problems, NAS of Ukraine
2, Shpak str., 03113 Kyiv, Ukraine, Phone: (044)-456-8389, fax: (044)-241-7233, e-mail: petrov@ipri.kiev.ua
Abstract. Performed in this paper is the analysis of possibilities to create optical
information carriers for long-term information storage. Adduced are the results of
experimental investigations of properties inherent to optical carriers of the WORM type
after 25-year storage. It has been shown that their micro-relief structure formed by using
focused laser radiation on thin films of chalcogenide vitreous semiconductors had not
been practically changed after storing them for the above mentioned period in non-heated
areas.
Keywords: optical carrier, long-term storage, photo-thermal recording, chalcogenide
vitreous semiconductor.
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