Semiconductor Physics, Quantum Electronics and Optoelectronics, 12 (4) P. 412-416 (2009).
DOI:
https://doi.org/10.15407/spqeo12.04.412
References
1. D. de Nobel, Phase equilibrium and semiconductor properties CdTe // Phil. Res. Repts. 14, р. 361-399 (1959). | | 2. S.S. Chern, H.R. Vydyanath, F.A. Kroger, The defect structure of CdTe: Hall data // J. Solid State Chem. 14, р. 33-43 (1975). https://doi.org/10.1016/0022-4596(75)90359-X | | 3. V.М. Glazov, L.М. Pavlova, Homogeneity region in the system based on cadmium telluride // Neorganicheskiye materialy 30(5), p. 629-634 (1994), in Russian. | | 4. P. Fochuk, O. Korovyanko, O. Panchuk, High-temperature point defect equilibrium in CdTe modelling // J. Cryst. Growth 197, p. 603-606 (1999). https://doi.org/10.1016/S0022-0248(98)00797-0 | | 5. P.М. Fochuk, О.О. Коrоvyanko, О.Е. Panchuk, Calculation of incorporation constants for doping elements in CdTe // Physics and chemistry of solid state 2(3), p. 475-480 (2001), in Ukrainian. | | 6. P.М. Fochuk, О.Е. Panchuk, L.P. Scherbak, Dominating points defects in CdTe crystals: the range of Cd saturation // Physics and chemistry of solid state 5(1), p. 136-141 (2004), in Ukrainian. | | 7. P. Fochuk, R. Grill, O. Panchuk, The nature of point defects in CdTe // Journal of Electronic Materials. 35(6), p. 1354-1359 (2006). https://doi.org/10.1007/s11664-006-0268-9 | | 8. D.М. Freik, V.V. Prokopiv, U.М. Pysklynets, Atomic defects and their compensation in the doped and undoped cadmium telluride // Physics and chemistry of solid state 4(3), p. 547-555 (2004), in Ukrainian. | | 9. R. Grill, A. Zappettini, Point defects and diffusion in cadmium telluride // Progress in Crystal Growth and Characterization of Materials 48/49, p. 209-244 (2004). https://doi.org/10.1016/j.pcrysgrow.2005.06.001 | | 10. R. Grill, J. Franc, P. Höschl, I. Turkevych, E. Belas, and P. Moravec, Semi-insulating Tesaturated CdTe // IEEE Trans. Nucl. Sci. 52(5), p. 1925-1931 (2005). https://doi.org/10.1109/TNS.2005.856801 | | 11. Li Yujie, Ma Guoli, Jie Wanqi, Point defects in CdTe // J. Cryst. Growth 256 p. 266-275 (2003). https://doi.org/10.1016/S0022-0248(03)01373-3 | | 12. M.A. Berding, Native defects in CdTe // Phys. Rev. 60(12), p. 8943-8950 (1999). https://doi.org/10.1103/PhysRevB.60.8943 | | 13. V.G. Levich, Course of Theoretical Physics, vol. V1. Nаukа, Мoscow, 1969 (in Russian). | | 14. Yu.B. Rumer, M.Sh. Ryvkin, Thermodynamics, Statistical Physics and Kinetics. Nаukа, Мoscow, 1972 (in Russian). | | 15. G. Коrn, Т. Коrn, Reference Book on Mathematics. Nаukа, Мoscow, 1977, (in Russian). | | 16. Su-Huai Wei and S.B. Zhang, Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe // Phys. Rev. B 66, 155211-1-155211-10 (2002). | | 17. А.V. Savitskiy, В.I. Тkаchuk, P.N. Тkаchuk, Electric properties of extracted cadmium telluride // Fizika tekhnika poluprovodnikov 26(5), p. 952-955 (1992), in Russian. | | 18. Е.А. Bоbrоvа, Y.V. Кlеvkоv, S.А. Меdvеdev, А.F. Plоtnikov, Investigation of the deep electron states in textured polycrystals p-CdTe of stoichiometric composition by the DLTS method // Fizika tekhnika poluprovodnikov 36(12), p. 1426- 1431 (2002), in Russian. https://doi.org/10.1134/1.1529243 | | 19. V. Babentsov, V. Corregidor, К. Benz, M. Fiederle, T. Feltgen, E. Dieguez, Defect engineering in CdTe based on the tоtal energies of elementary defects // Nucl. Instr. Meth. Phys. Res. А 458, р. 85-89 (2001). https://doi.org/10.1016/S0168-9002(00)00924-4 | | 20. V.S. Ivanov, V.B. Stopachynskyj, V.А. Chapnin, Differential spectroscopy of local centers in CdTe // Fizika tekhnika poluprovodnikov 5(1), p. 101-105 (1971), in Russian. | | 21. N.V. Agrinskaya, О.А. Matveev, А.V. Nikitin, V.А. Sladkova, Features of edge photoluminescence of CdTe-Cl crystals // Fizika tekhnika poluprovodnikov 21(4), p. 676-679 (1987), in Russian. | | 22. А.V. Savitskiy, О.А. Parfenyuk, М.I. Ilaschuk, А.J. Savchuk, S.N. Chupyra, Characteristic equilibrium and low-temperature photoluminescence of monocrystalline CdTe-Pb // Fizika tekhnika poluprovodnikov 38(5), p. 516-521 (2004), in Russian. https://doi.org/10.1134/1.1755877 | | 23. B.K. Meyer, W. Stadler, Native defect identification in II-VI materials // J. Cryst. Growth 161, p. 119-127 (1996). https://doi.org/10.1016/B978-0-444-82411-0.50108-X | | 24. K. Scholz, H. Stiens, G. Muller-Vogt, Investigations on the effect of contacts on p-type CdTe DLTSmeasurements // J. Cryst. Growth 197, p. 586-586 (1999). https://doi.org/10.1016/S0022-0248(98)00801-X | | 25. W. Stadler, D.M. Hofmann, H.C. Alt, T. Muschik, B.K. Meyer, Optical investigation of defects in CdZnTe // Phys. Rev. B 51(16), p. 10619-10630 (1995). https://doi.org/10.1103/PhysRevB.51.10619 | | 26. S. Lany, V. Ostheimer, H. Wolf, Th. Wichert, Vacancies in CdTe: experiment and theory // Physica B 308-310, p. 958-962 (2001). https://doi.org/10.1016/S0921-4526(01)00841-9 | | 27. F.T.J. Smith, Electrically active point defects in cadmium telluride // Metallurgical and Material Trans. B 1(3), p. 617-621 (1970). https://doi.org/10.1007/BF02811585 | |
|
|