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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 4. P. 412-416.
Thermodynamic analysis of processes creating
the defects in cadmium telluride crystals under conditions
of high-temperature annealing
1V. Stefanyk Precarpathion National University, 57, Shevchenko str.,
76000 Ivano-Frankivsk, Ukraine; e-mail: goritchok@rambler.ru
Abstract. The defective structure of specifically undoped cadmium telluride crystals was
researched using the theory of thermodynamic potentials. The calculated concentration of
point defects and free charge carriers in the CdTe crystals, depending on technological
factors of two-temperature annealing (annealing temperature T and partial pressure of
cadmium P Cd vapor). The dominant types of defects that determine the basic properties
of the material n- and p-type conduction were determined.
Keywords: two-temperature annealing, thermodynamic potential, point defects,
electrical properties, cadmium telluride.
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