1. P. Kennis and L. Faucon, Rigorous analysis of planar MIS transmission lines layered lossy media // Electron. Lett. 18(14), July 1982.
https://doi.org/10.1049/el:19820416 |
| |
2. A. Benghalia, M. Ahmadpanah and H. Baudrand, Accurate two-dimensional approach for capacitance calculation in microcoplanar MES transmission lines // Electron. Lett. 24(16), p. 996- 998 (August 1988).
https://doi.org/10.1049/el:19880678 |
| |
3. M.J. Golio, J.R.C. Golio // IEEE Trans. Microwave Theory Tech. 39, 142-146 (1991).
https://doi.org/10.1109/22.64619 |
| |
4. T. Enoki, S. Sugitani, Y. Yamane // IEEE Trans. Electron. Devices 37, p. 935-941 (1990).
https://doi.org/10.1109/16.52426 |
| |
| 5. S. Lepaul, Contribution a la modelisation numerique des composant electroniques aux dimension nanometrique // These de doctorat, Unversite de Paris VI, 1996. |
| |
6. A. Cappy and W. Heinrich, High frequency FET noise performance: a new approach // IEEE Trans. Electron. Devices, ED-36, no. 2 (Feb. 1989).
https://doi.org/10.1109/16.19943 |
| |
7. H. Fujimoto & Al, New high power planar gate GaAs MESFET with improved gate-drain breakdown voltage // Electron. Lett. 61(2), p. 137 (Jan. 1995).
https://doi.org/10.1049/el:19950070 |
| |
8. Kazushige Horio and Tomiko Yamada, Towdimensional analysis of surface state effects on turn-on characteristics in GaAs MESFET's // IEEE Trans. Electron. Devices, ED-46, no. 4 (April 1999).
https://doi.org/10.1109/16.753696 |
| |
9. W. Schokley and W.T. Read, Statistics of the recombination of holes and electrons // Phys. Rev. 87, p. 835-842 (1952).
https://doi.org/10.1103/PhysRev.87.835 |
| |
10. M.M. Ahmed // IEEE Trans. Electron. Devices 47, p. 299-303 (2000).
https://doi.org/10.1109/16.822271 |
| |