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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 4. P. 417-420.
Two-dimensional modeling the static parameters
for a submicron field-effect transistor
Institut de Physique Universite de OUM EL BOUAGHI, Algeria
Abstract. A comparison of two different models for simulation of submicron GaAs
MESFETs static characteristics has been made. A new two-dimensional numerical model
is presented to investigate the submicron field-effect transistor characteristics, the
influence of the geometry of the component, like the inter-electrode distance, on the
capacities. All simulation revealed the existence of a high contact electric field near the
gate, which creates a depopulated zone around the gate, but the preceding studies have
neglected the edge effects, which are very significant for the submicron MESFETs.
Keywords: MESFET, submicron device simulation, modeling.
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