Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 4. P. 421-423.
https://doi.org/10.15407/spqeo12.04.421

Stacking Faults in the single crystals
Mihir M. Vora1 and Aditya M. Vora1, 2*

1Parmeshwari 165, Vijaynagar Area, Hospital Road, Bhuj–Kutch, 370 001, Gujarat, India
2Humanities and Social Science Department, S. T. B. S. College of Diploma Engineering, Opp. Spinning Mill, Varachha Road, Surat 395 006, Gujarat, India;
*Tel.: +91-2832-256424; e-mail: voraam@yahoo.com

Abstract. The single crystals of In x MoSe 2 (0 ≤ x ≤ 1) and Re-doped MoSe 2 viz. MoRe 0.005 Se 1.995 , MoRe 0.001 Se 1.999 and Mo 0.995 Re 0.005 Se 2 have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural characterization of these crystals was made using the XRD method. The particle size for a number of reflections has been calculated using the Scherrer formula. There are considerable variations appearing in deformation (α) and growth (β) fault probabilities in In x MoSe 2 (0 ≤ x ≤ 1) and Re-doped MoSe 2 single crystals due to their off-stoichiometry, which possesses the stacking fault in the single crystal.

Keywords: In x MoSe 2 (0 ≤ x ≤ 1) single crystals, Re-doped MoSe 2 viz. MoRe 0.005 Se 1.995 , MoRe 0.001 Se 1.999 and Mo 0.995 Re 0.005 Se 2 , XRD, particle size, deformation probability, growth probability, stacking fault.

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