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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 4. P. 337-342.
Formation of ohmic contacts to n(p)-gan and measurement
of their contact resistivity
1State Enterprise Research Institute “Orion”, 8a Eugene Pottier St., Kyiv 03057, Ukraine,
Abstract. We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium
boride as diffusion barrier. It is shown that the optimal method of contact resistivity
measurement is the transmission line method (TLM) with circular contact geometry. The
Ti−Al−TiB x −Au contact metallization to n-GaN retains its layer structure after thermal
annealing at temperatures up to 900 °C. The contact resistivity ρ с is (6.69±1.67)×10 -5
Ω⋅cm 2 . For the Au−TiB x −Ni−p-GaN contact structure, the contact resistivity is
(1±0.15)×10 -3 Ω⋅cm 2 .
Keywords: ohmic contact, gallium nitride, contact resistivity, transmission line method.
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