Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 4. P. 353-356.
https://doi.org/10.15407/spqeo13.04.353


Double- and triple-crystal X-ray diffractometry of microdefects in silicon
V.B. Molodkin, S.I. Olikhovskii, Ye.M. Kyslovskyy, E.G. Len, O.V. Reshetnyk, T.P. Vladimirova, V.V. Lizunov, S.V. Lizunova

G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36, Academician Vernadsky Blvd. 03680 Kyiv, Ukraine, Phone: (044)4229583, e-mail: len@imp.kiev.ua

Abstract. The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD and TCD) from single crystals with defects in crystal bulk and with strained subsurface layers. Being based on this theory, we offer the combined DCD+TCD method that exhibits the higher sensitivity to defect structures with wide size distributions as compared with any of these methods alone. In the investigated Czochralski-grown silicon crystals, the sizes and concentrations of small oxygen precipitates as well as small and large dislocation loops have been determined using this method.

Keywords: dynamical scattering, triple-crystal diffractometer, double-crystal diffractometer, microdefects.

Full Text (PDF)

Back to N4 Volume 13