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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 4. P. 353-356.
Double- and triple-crystal X-ray diffractometry
of microdefects in silicon
G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine,
36, Academician Vernadsky Blvd. 03680 Kyiv, Ukraine,
Phone: (044)4229583, e-mail: len@imp.kiev.ua
Abstract. The generalized dynamical theory of X-ray scattering by real single crystals
allows to self-consistently describe intensities of coherent and diffuse scattering
measured by double- and triple-crystal diffractometers (DCD and TCD) from single
crystals with defects in crystal bulk and with strained subsurface layers. Being based on
this theory, we offer the combined DCD+TCD method that exhibits the higher sensitivity
to defect structures with wide size distributions as compared with any of these methods
alone. In the investigated Czochralski-grown silicon crystals, the sizes and concentrations
of small oxygen precipitates as well as small and large dislocation loops have been
determined using this method.
Keywords: dynamical scattering, triple-crystal diffractometer, double-crystal
diffractometer, microdefects.
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