Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (4) P. 353-356 (2010).
DOI:
https://doi.org/10.15407/spqeo13.04.353
References
1. A. Borgesi, B. Pivac, A. Sasella, and A. Stella, Oxygen precipitation in silicon // J. Appl. Phys. 77(2), p. 4169-4244 (1995). https://doi.org/10.1063/1.359479 | | 2. M.A. Krivoglaz, X-ray and Neutron Scattering in Nonideal Crystals. Springer, Berlin, 1996. https://doi.org/10.1007/978-3-642-74291-0 | | 3. V.B. Molodkin, S.I. Olikhovskii, M.E. Osinovskii, Dynamical theory of X-ray and electrons diffuse scattering in crystals contained the Coulomb-type defects // Metallofizika Noveishie Tekhnol. 5(1), p. 3-15 (1983), in Russian. | | 4. B.C. Larson and W. Schmatz, Huang diffuse scattering from dislocation loops and cobalt precipitates in copper // Phys. Rev. B 10(6), p. 2307-2314 (1974). https://doi.org/10.1103/PhysRevB.10.2307 | | 5. A.A. Lomov, P. Zaumseil, and U. Winter, Characterization of process-induced defects in silicon with triple-crystal diffractometry // Acta Crystallogr. A 41, p. 223-227 (1985). https://doi.org/10.1107/S0108767385000502 | | 6. V. Holý and J. Kubĕna, X-ray double and triple crystal diffractometry of silicon crystals with small defects // Phys. status solidi (b) 170(1), p. 9-25 (1992). https://doi.org/10.1002/pssb.2221700102 | | 7. A. Iida and K. Kohra, Separate measurements of dynamical and kinematical X-ray diffractions from silicon crystals with a triple crystal diffractometer // Phys. status solidi (a) 51(2), p. 533-542 (1979). https://doi.org/10.1002/pssa.2210510227 | | 8. P. Zaumseil and U. Winter, Triple crystal diffractometer investigations of silicon crystals with different collimator-analyzer arrangements // Phys. status solidi (a) 70(2), p. 497-505 (1982). https://doi.org/10.1002/pssa.2210700217 | | 9. P. Zaumseil and U. Winter, Triple crystal diffractometer investigations of imperfections in silicon crystals with Laue diffraction case// Phys. status solidi (a) 73(2), p. 455-466 (1982). https://doi.org/10.1002/pssa.2210730220 | | 10. A.M. Afanasev, S.S. Fanchenko, and A.V. Maslov, On the equivalent strain and damage distributions of thin subsurface layers in the triple-crystal X-ray diffractometry // Phys. status solidi (a) 117(2), p. 341-350 (1990). https://doi.org/10.1002/pssa.2211170203 | | 11. P. Zaumseil, U. Winter, F. Cembali, M. Servidori, and Z. Sourek, Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves // Phys. status solidi (a) 100(1), p. 95-104 (1987). https://doi.org/10.1002/pssa.2211000110 | | 12. V.B. Molodkin, M.V. Kovalchuk, A.P. Shpak et al., Dynamical Bragg and diffuse scattering effects and implications for diffractometry in the twenty-first century, in: Diffuse Scattering and the Fundamental Properties of Materials. MOMENTUM PRESS, LLC, New Jersey, p. 391- 434, 2009. | | 13. V.B. Molodkin, S.I. Olikhovskii, E.N. Kislovskii, E.G. Len, and E.V. Pervak, Bragg diffraction of Xrays by single crystals with large microdefects. I. Generalized dynamical theory // Phys. status solidi (b) 227(2), p. 429-447 (2001). https://doi.org/10.1002/1521-3951(200110)227:2<429::AID-PSSB429>3.0.CO;2-C | | 14. S.I. Olikhovskii, V.B. Molodkin, E.N. Kislovskii, E.G. Len, and E.V. Pervak, Dynamical diffuse scattering amplitude and intensity Bragg diffraction of X-rays by single crystals with large microdefects // Phys. status solidi (b) 231(1), p. 199-212 (2002). https://doi.org/10.1002/1521-3951(200205)231:1<199::AID-PSSB199>3.0.CO;2-Y | | 15. E.N. Kislovskii, S.I. Olikhovskii, V.B. Molodkin, V.V. Nemoshkalenko, V.P. Krivitsky, E.G. Len, E.V. Pervak, G.E. Ice, and B.C. Larson, Highresolution diffraction measurements Bragg diffraction of X-rays by single crystals with large microdefects // Phys. status solidi (b) 231(1), p. 213-221 (2002). https://doi.org/10.1002/1521-3951(200205)231:1<213::AID-PSSB213>3.0.CO;2-C | | 16. V.B. Molodkin, S.I. Olikhovskii, E.N. Kislovskii, T.P. Vladimirova, E.S. Skakunova, R.F. Seredenko, and B.V. Sheludchenko, Dynamical theoretical model of the high-resolution double-crystal X-ray diffractometry of imperfect single crystals with microdefects // Phys. Rev. B 78, 224109-1-12 (2008). https://doi.org/10.1103/PhysRevB.78.224109 | | 17. S.I. Olikhovskii, V.B. Molodkin, Ye.M. Kislovskii, O.V. Reshetnyk, T.P. Vladimirova, G.E. Ice, R.O. Barabash, R. Köhler, D.O. Grigoriev, Analytical characterization of diffuse peaks on the triple-crystal profiles of X-ray difractometry from single crystals with microdefects // Metallofizika Noveishie Tekhnol. 27, p. 1251-1264 (2005), in Russian. | | 18. S.I. Olikhovskii, V.B. Molodkin, E.N. Kislovskii, O.V. Reshetnyk, T.P. Vladimirova, E.G. Len, G.E. Ice, R.O. Barabash, R. Köhler, and D.O. Grigor'ev, The role of defects in the crystal bulk and strains in disturbed surface layers in three single crystals at the formation of triple-crystal profiles of X-ray difractometry // Metallofizika Noveishie Tekhnol. 27, p. 947-968 (2005), in Russian. | | 19. V.B. Molodkin, S.I. Olikhovskii, E.G. Len, E.N. Kislovskii, V.P. Kladko, O.V. Reshetnyk, T.P. Vladimirova, and B.V. Sheludchenko, Sensitivity of triple-crystal X-ray diffractometers to microdefects in silicon // Phys. status solidi (a) 206(8), p. 1761-1765 (2009). https://doi.org/10.1002/pssa.200881588 | | 20. R. Bouchrd, J.R. Schneider, S. Gupta, S. Messoloras, R.J. Stewart, H. Nagasawa, W. Zulehner, Distribution of SiO2 precipitates in large oxygen rich Czochralski-grown silicon single crystals after annealing at 750 °C // J. Appl. Phys. 77(2), p. 553-562 (1995). https://doi.org/10.1063/1.359039 | |
|
|