Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (4) P. 353-356 (2010).
DOI: https://doi.org/10.15407/spqeo13.04.353


References

1. A. Borgesi, B. Pivac, A. Sasella, and A. Stella, Oxygen precipitation in silicon // J. Appl. Phys. 77(2), p. 4169-4244 (1995).
https://doi.org/10.1063/1.359479
2. M.A. Krivoglaz, X-ray and Neutron Scattering in Nonideal Crystals. Springer, Berlin, 1996.
https://doi.org/10.1007/978-3-642-74291-0
3. V.B. Molodkin, S.I. Olikhovskii, M.E. Osinovskii, Dynamical theory of X-ray and electrons diffuse scattering in crystals contained the Coulomb-type defects // Metallofizika Noveishie Tekhnol. 5(1), p. 3-15 (1983), in Russian.
4. B.C. Larson and W. Schmatz, Huang diffuse scattering from dislocation loops and cobalt precipitates in copper // Phys. Rev. B 10(6), p. 2307-2314 (1974).
https://doi.org/10.1103/PhysRevB.10.2307
5. A.A. Lomov, P. Zaumseil, and U. Winter, Characterization of process-induced defects in silicon with triple-crystal diffractometry // Acta Crystallogr. A 41, p. 223-227 (1985).
https://doi.org/10.1107/S0108767385000502
6. V. Holý and J. Kubĕna, X-ray double and triple crystal diffractometry of silicon crystals with small defects // Phys. status solidi (b) 170(1), p. 9-25 (1992).
https://doi.org/10.1002/pssb.2221700102
7. A. Iida and K. Kohra, Separate measurements of dynamical and kinematical X-ray diffractions from silicon crystals with a triple crystal diffractometer // Phys. status solidi (a) 51(2), p. 533-542 (1979).
https://doi.org/10.1002/pssa.2210510227
8. P. Zaumseil and U. Winter, Triple crystal diffractometer investigations of silicon crystals with different collimator-analyzer arrangements // Phys. status solidi (a) 70(2), p. 497-505 (1982).
https://doi.org/10.1002/pssa.2210700217
9. P. Zaumseil and U. Winter, Triple crystal diffractometer investigations of imperfections in silicon crystals with Laue diffraction case// Phys. status solidi (a) 73(2), p. 455-466 (1982).
https://doi.org/10.1002/pssa.2210730220
10. A.M. Afanasev, S.S. Fanchenko, and A.V. Maslov, On the equivalent strain and damage distributions of thin subsurface layers in the triple-crystal X-ray diffractometry // Phys. status solidi (a) 117(2), p. 341-350 (1990).
https://doi.org/10.1002/pssa.2211170203
11. P. Zaumseil, U. Winter, F. Cembali, M. Servidori, and Z. Sourek, Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves // Phys. status solidi (a) 100(1), p. 95-104 (1987).
https://doi.org/10.1002/pssa.2211000110
12. V.B. Molodkin, M.V. Kovalchuk, A.P. Shpak et al., Dynamical Bragg and diffuse scattering effects and implications for diffractometry in the twenty-first century, in: Diffuse Scattering and the Fundamental Properties of Materials. MOMENTUM PRESS, LLC, New Jersey, p. 391- 434, 2009.
13. V.B. Molodkin, S.I. Olikhovskii, E.N. Kislovskii, E.G. Len, and E.V. Pervak, Bragg diffraction of Xrays by single crystals with large microdefects. I. Generalized dynamical theory // Phys. status solidi (b) 227(2), p. 429-447 (2001).
https://doi.org/10.1002/1521-3951(200110)227:2<429::AID-PSSB429>3.0.CO;2-C
14. S.I. Olikhovskii, V.B. Molodkin, E.N. Kislovskii, E.G. Len, and E.V. Pervak, Dynamical diffuse scattering amplitude and intensity Bragg diffraction of X-rays by single crystals with large microdefects // Phys. status solidi (b) 231(1), p. 199-212 (2002).
https://doi.org/10.1002/1521-3951(200205)231:1<199::AID-PSSB199>3.0.CO;2-Y
15. E.N. Kislovskii, S.I. Olikhovskii, V.B. Molodkin, V.V. Nemoshkalenko, V.P. Krivitsky, E.G. Len, E.V. Pervak, G.E. Ice, and B.C. Larson, Highresolution diffraction measurements Bragg diffraction of X-rays by single crystals with large microdefects // Phys. status solidi (b) 231(1), p. 213-221 (2002).
https://doi.org/10.1002/1521-3951(200205)231:1<213::AID-PSSB213>3.0.CO;2-C
16. V.B. Molodkin, S.I. Olikhovskii, E.N. Kislovskii, T.P. Vladimirova, E.S. Skakunova, R.F. Seredenko, and B.V. Sheludchenko, Dynamical theoretical model of the high-resolution double-crystal X-ray diffractometry of imperfect single crystals with microdefects // Phys. Rev. B 78, 224109-1-12 (2008).
https://doi.org/10.1103/PhysRevB.78.224109
17. S.I. Olikhovskii, V.B. Molodkin, Ye.M. Kislovskii, O.V. Reshetnyk, T.P. Vladimirova, G.E. Ice, R.O. Barabash, R. Köhler, D.O. Grigoriev, Analytical characterization of diffuse peaks on the triple-crystal profiles of X-ray difractometry from single crystals with microdefects // Metallofizika Noveishie Tekhnol. 27, p. 1251-1264 (2005), in Russian.
18. S.I. Olikhovskii, V.B. Molodkin, E.N. Kislovskii, O.V. Reshetnyk, T.P. Vladimirova, E.G. Len, G.E. Ice, R.O. Barabash, R. Köhler, and D.O. Grigor'ev, The role of defects in the crystal bulk and strains in disturbed surface layers in three single crystals at the formation of triple-crystal profiles of X-ray difractometry // Metallofizika Noveishie Tekhnol. 27, p. 947-968 (2005), in Russian.
19. V.B. Molodkin, S.I. Olikhovskii, E.G. Len, E.N. Kislovskii, V.P. Kladko, O.V. Reshetnyk, T.P. Vladimirova, and B.V. Sheludchenko, Sensitivity of triple-crystal X-ray diffractometers to microdefects in silicon // Phys. status solidi (a) 206(8), p. 1761-1765 (2009).
https://doi.org/10.1002/pssa.200881588
20. R. Bouchrd, J.R. Schneider, S. Gupta, S. Messoloras, R.J. Stewart, H. Nagasawa, W. Zulehner, Distribution of SiO2 precipitates in large oxygen rich Czochralski-grown silicon single crystals after annealing at 750 °C // J. Appl. Phys. 77(2), p. 553-562 (1995).
https://doi.org/10.1063/1.359039