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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 4. P. 379-383.
Effect of pulsing magnetic field on radiative recombination spectra
of GaP and InP single crystals
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: 38 (044) 525-94-64, 525-61-82; e-mail: re_rom@ukr.net
Abstract. We present the results of investigations concerning the effect caused by weak
magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of
impurity-defect composition. This effect was found when studying the radiative
recombination (luminescence) spectra within the range 0.6 to 2.5 µm at 77 K. It was
obtained that a short-term influence of field initiates long-term changes in the intensity of
radiative recombination inherent to centers of different nature. General regularities in
behavior of the luminescence intensity have been found. This intensity changes with the
concentration of recombination centers. A possible mechanism of observed
transformations has been discussed.
Keywords: photoluminescence, weak magnetic field, impurity-defect composition.
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