Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (4) P. 379-383 (2010).
DOI: https://doi.org/10.15407/spqeo13.04.379

References

1. Yu.I. Golovin, Magnetoplastic effects in solids // Physics of the Solid State 46, No. 5, p. 789-824 (2004).
https://doi.org/10.1134/1.1744954
2. V.I. Belyavsky, M.N. Levin, Spin effects in defect reactions // Phys. Rev. B 70, p. 104101-1 - 104101- 8 (2004).
https://doi.org/10.1103/PhysRevB.70.104101
3. M.N. Levin, B.A. Zohn, Influence of pulse magnetic fields on Cz-Si crystals // Zhurnal eksperimentalnoi tekhnicheskoi fiziki 111, No. 4, p. 1373-1397 (1997), in Russian.
4. Yu.A. Klimov, V.M. Mislovski, V.V. Tarasenko, Influence of pulse magnetic field on electrical and physical properties of MIS structures // Elektronnaya tekhnika, Ser. 3, 139, No. 5, p. 20-25 (1990), in Russian.
5. N.V. Kukushkin, S.N. Postnikov, Yu.A. Terman, V.M. Kerdyakin, Changing of elastic-tension states of Si-SiO2 structures at pulsing magnetic field influence // Zhurnal tekhnicheskoi fiziki 55, No. 10, p. 2083-2084 (1985), in Russian.
6. V.M. Mislovski, Yu.A. Klimov, N.S. Samsonov, E.V. Simanovich, Changes in electrical and physical properties of Si-SiO2 structures caused by pulses of magnetic field // Fizika tekhnika poluprovodnikov 28, No. 5, p. 772-777 (1994), in Russian.
7. M.N. Levin, G.V. Semenova, T.P. Sushkova, Effect of magnetic-induced diffusion instability in III-V semiconductor compounds // Doklady Akademii Nauk 388, No. 10, p. 85-87 (2003), in Russian.
8. M.N. Levin, A.V. Tatarintsev, O.A. Kostsova and A.M. Kostsov, Activation of semiconductor surface by a pulsed magnetic field // Technical Physics 48, No. 10, p. 1304-1306 (2003).
https://doi.org/10.1134/1.1620124
9. M.N. Levin, G.V. Semenova, A.V. Tatarintsev and O. N. Shumskaya, The effect of treatment in a pulsed magnetic field on the kinetics of oxidation of indium phosphide crystals // Technical Physics Letters 31, No. 9, p. 762-764 (2005).
https://doi.org/10.1134/1.2061739
10. R.V. Morgunov, S.Z. Shmurak, B.K. Ponomarev, A.A. Bespakov, V.I. Kulakov, Influence of magnetic field on photoluminescence of Eu 382 impurity at aggregating in NaCl crystals // Pis'ma zhurnal tekhnicheskoi fiziki 76, No. 5, p. 366-370 (in Russian).
https://doi.org/10.1134/1.1520628
11. V.I. Gavrilenko, A.M. Grekhov, D.V. Korbutjak and V.G. Litovchenko, Optical Properties of Semiconductors. Naukova dumka, Kiev, 1987, pp. 353-369, 379-385 (in Russian).
12. S.M. Dishman, D.F. Dalg, W.P. Knox, Deep hole traps in n-type liquid encapsulated Czochralski GaP // J. Appl. Phys. 42, No. 11, p. 4693-4705 (1972).
https://doi.org/10.1063/1.1660991
13. Ya.E. Pokravskii, Radiative Recombination in Semiconductors. Nauka, Moscow, 1972 (in Russian).
14. Yu.A. Osip'yan, R.K. Nikolaev, S.Z. Shmurak, Yu.I. Golovin, D.V. Lopatin and R.B. Morgunov, Effect of a constant magnetic field on the photoconductivity of single-crystal C60 // Semiconductors 41, No. 11, p. 1926-1928 (1999).
https://doi.org/10.1134/1.1131128
15. V.V. Negreskul, E.V. Russu, S.I. Radaucan, A.G. Cheban, Radiative recombination in nondoped indium phosphide crystals // Fizika tekhnika poluprovodnikov 9, No. 5, p. 893-900 (1975), in Russian.
16. A.B. Georgobiani, A.V. Mikulyonok, E.I. Panasyuk et al., Deep levels in non-doped and doped by iron indium phosphide single crystals // Fizika tekhnika poluprovodnikov 17, No. 4, p. 593- 598 (1983), in Russian.
17. P.W. Yu, A model for the ~1.10 eV emission band in InP // Solid State Communs. 34, No. 3, p. 183- 186 (1980).
https://doi.org/10.1016/0038-1098(80)91142-4
18. A.B. Georgobiani, A.V. Mikulyonok, I.G. Stoyanova et al., Non-equilibrium carrier radiative recombination in indium phosphide single crystals // Phys. status solidi (a) 80, No. 1, p. 109- 115 (1983).
https://doi.org/10.1002/pssa.2210800111