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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 4. P. 418-421.
Complex destruction of near-surface silicon layers
of Si-SiO2 structure
I.I. Mechnikov Odessa National University,
2, Dvorianskaya str., 65026 Odessa, Ukraine
E-mail: yatsunskiy@gmail.com
Abstract. The structure of near-surface silicon layers of Si-SiO 2 has been investigated. It
was observed the complex destruction of these layers caused by relaxation of mechanical
stresses. The magnitude of mechanical stresses depends not only on parameters of silicon
dioxide and silicon but on presence of initial defects in silicon. We have proposed the
defect formation mechanism of near-surface layers in Si-SiO 2 structure, and it has been
revealed the influence of impurities on this process.
Keywords: Si-SiO2 structure, dislocation, defect, mechanical stresses.
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