References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (4) P. 418-421 (2010).
DOI: https://doi.org/10.15407/spqeo13.04.418

References

1. G.Y. Krasnikov, N.A. Zaitsev, I.V. Matyushkin, A mathematical modeling of the high-temperature silicon oxidation kinetics and the structure of the boundary layer in the Si-SiO2 system // Fizika tekhnika poluprovnikov, 37(1), p. 44-49 (2003), in Russian. https://doi.org/10.1134/1.1538537

2. A. Stesmans, B. Nouwen, V.V. Afanasyev, Structural degradation of thermal SiO2 on Si by high temperature annealing: defect generation // Phys. Rev. B, 66, No.4, p. 5307-5316 (2002). https://doi.org/10.1103/PhysRevB.66.045307

3. V.G. Litovchenko, Three-layer model of semiconductor-insulator structure // Semiconductor techniques and microelectronics, No.12, p. 3-12 (1973), in Russian.

4. V.G. Litovchenko, Semiconductor Physics of Layered Structures. Kiev, Naukova Dumka, 1980 (in Russian).

5. O.A. Kulinich, M.A. Glauberman, Investigation of oxidation of silicon subsurface layers // Physics and Chemistry of Solid State, No.1, p. 65-68 (2005), in Ukraine.

6. O.A. Kulinich, A.A. Lisovskaya, N.N. Sadova, The improving revealing possibility of selective etching in monocrystallin silicon // Ukr. fiz. zhurnal, 35, p. 1691-1694 (1990).

7. T.V. Panov, V.I. Blinov, X-ray Investigations. Omsk, Omsk State University, 2004 (in Russian).

8. V.A. Smyntyna, O.A. Kulinich, M.A. Glauberman, et al., Technique for oxidation parameters definition, based on investigation of defects formation images in silicon inversion MOSstructures // 17 Intern. Conf. "Microwave and Telecommunication Technology", 10-14 September, 2007, Sevastopol, Ukraine, p. 556-557. https://doi.org/10.1109/CRMICO.2007.4368849