Abstract


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 4. P. 444-447. https://doi.org/10.15407/spqeo13.04.444 Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure P.M. Gorley¹, Z.M. Grushka¹, O.G. Grushka¹, P.P. Gorley^1,2, I.I. Zabolotsky¹ ¹Yu. Fedkovych Chernivtsi National University, 2, Kotsyubynsky str., 58012 Chernivtsi, Ukraine, Phone: +38 03722 46877, fax: +38 03722 46877, E-mail: semicon-dpt@chnu.edu.ua ²Centro de Física das Interacções Fundamentais, Av. Rovisco Pais, 1049-001 Lisboan, Portugal Phone: +351 21 8419690, e-mail: pphorley@cfif.ist.utl.pt Abstract. Using the method of deposition over the optical contact, the authors created n- SnS 2 /n-CdIn 2 Te 4 heterojunction and investigated temperature evolution of its current- voltage characteristics under the forward bias U ≤ 3 V. Analyzing temperature dependence of the curves obtained, the main mechanisms of current transport through the semiconductor contact were determined, allowing prediction of successful possible applications of the heterojunction studied under high temperatures and elevated radiation due to the parameters of the base semiconductors and the diode structure itself. Keywords: heterojunction, n-SnS 2 /n-CdIn 2 Te 4 , optical contact, current-voltage curve, current transport mechanisms. Full Text (PDF) Back to N4 Volume 13