Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (4) P. 444-447 (2010).
DOI: https://doi.org/10.15407/spqeo13.04.444

References

1. Z.M. Grushka, P.N. Gorley, O.G. Grushka, P.P. Horley, Ya.I. Radevych, Zh. Zhuo, Mercury indium telluride - a new promising material for photonic structures and devices // Proc. SPIE, 6029, p. 60291A (2006).
https://doi.org/10.1117/12.667749
2. C. Wang, K. Tang, Q. Yang, Y. Quan, Raman scattering, far infrared spectrum and photoluminescence of SnS2 nanocrystallites // Chem. Phys. Lett., 357, p. 371-375 (2002).
https://doi.org/10.1016/S0009-2614(02)00495-5
3. G.B. Dubrovsky, Crystal structure and electron spectrum of SnS2 // Fizika Tverdogo Tela 40, p. 1712-1718 (1998), in Russian.
https://doi.org/10.1134/1.1130598
4. D.B. Ananina, V.L. Bakumenko, А.K. Bodnakov, G.G. Grushka, About characteristics of n-SnS2/nHg3In2Te6 heterojunction, prepared by a method of deposition over optical contact // Fizika i Tekhnika Poluprovodnikov, 14 (12), p. 2419-2422 (1980), in Russian.
5. S. Ozaki, Y. Take, S. Adachi, Optical properties and electronic energy-band structure of CdIn2Te4 // J. Mater. Sci.: Mater. Electron., 18, p. S347-S350 (2007).
https://doi.org/10.1007/s10854-007-9244-2
6. L.P. Galchinetskyy, V.M. Koshkin, V.М. Kumakov et al., Effect of radiating stability of semiconductors with stoichiometric vacancies // Fizika Tverdogo Tela 14 (2), p. 643-646 (1972), in Russian.
7. S.M. Sze, Physics of Semiconductor Devices. Mir, Moscow (1984), in Russian.
8. P.M. Gorley, O.G. Grushka, O.I. Vorobets, Z.M. Grushka, Temperature dependences of the concentration of carriers in CdIn2Te4 crystals // Ukr. J. Phys. 51(5), p. 475-477 (2006).
9. Ya.S. Mazurkevych, A.G. Voloshchuk, S.B. Kostenko, G.G. Grushka, Method of chemical surface treatment of the tellurium-containing semiconductor materials, Patent №1080680 (1983).
10. B.L. Sharma, P.K. Purohit, Semiconductor Heterojunction, Mir, Moscow (1979), in Russian.
11. L. Amalraj, C. Sanjeeviraja, M. Jayachandran, Spray pyrolysised tin disulphide thin film and characterrization // J. Cryst. Growth, 234, p. 683-689 (2002).
https://doi.org/10.1016/S0022-0248(01)01756-0
12. J.-F. Lambert, Cristallogenèse et caractérisations physico-chimiques et optiques des matériaux semiconducteurs AIn2Te4 (A = Cd, Zn et Mn). Leurs potentialités comme modulateurs dans la bande spectrale 1,06-10,6 micromètres, PhD These (1993), in French.
13. P.M. Gorley, I.V. Prokopenko, Z.M. Grushka, V.P. Makhniy, O.G. Grushka, O.A. Chervinsky, Direct current transport mechanisms in n-InSe/pCdTe heterostructure // Semiconductor Physics, Quantum Electronics & Optoelectronics 11 (2), p. 124-131 (2008).
14. P.M. Gorley, Z.M. Grushka, V.P. Makhniy, O.G. Grushka, O.A. Chervinsky, P.P. Horley, Yu.V. Vorobiev, J. Gonzalez-Hernandez, Сurrent transport mechanisms in n-InSe/p-CdTe heterojunctions // Phis. status solidi (c), 5(12), p. 3622-3625 (2008).
https://doi.org/10.1002/pssc.200780149