Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 4. P. 389-392.
DOI: https://doi.org/10.15407/spqeo14.04.389

Influence of small miscuts on self-ordered growth of Ge nanoislands
O.Yo. Gudymenko 1, V.P. Kladko1, O.M. Yefanov1, M.V. Slobodian1, Yu.S. Polischuk1,Z.F. Krasilnik2, D.V. Lobanov2, А.А. Novikov2

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine
2Institute of Microstructure Physics, RAS, 603600 Nizhny Novgorod, GSP-105, Russia

Abstract. Using high-resolution X-ray diffraction (HRXRD), we have investigated lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses deposited on a strained x x 1 Ge Si − sublayer. We observed that the high lateral ordering degree is initiated by ordered modulation of non-uniform deformation fields. This modulation is induced by small (∼0.3°) misorientation of Si substrate from [001] direction. Finally, we show that the miscut can be the source of perfectly ordered nanoisland arrays in two dimensions when the growth is performed on the strained SiGe (001) sublayer. The effect of substrate miscut can be amplified tuning the deviation of buffer layer surface from [001] growth direction via increasing the Ge content.

Keywords: SiGe nanoislands, miscut, deformation field, high-resolution X-ray diffraction.

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