Journal cover page

Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 14 N 4
DOI: https://doi.org/10.15407/spqeo14.04

Influence of small miscuts on self-ordered growth of Ge nanoislands
O.Yo. Gudymenko, V.P. Kladko, O.M. Yefanov, M.V. Slobodian, Yu.S.Polischuk, Z.F. Krasilnik, D.V. Lobanov, .. Novikov
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 389-392.
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High-temperature expansion in self-consistent-field theory of spin-crossover compounds
Iu.V. Gudyma, Ye.M. Daskal
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 393-398.
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Optimized calibration of cryogenic silicon thermodiodes
O.M. Ivashchenko, Yu.M. Shwarts, M.M. Shwarts, D.P. Kopko, M.I. Sypko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 399-402.
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Jones-matrix diagnostics of the structure and classification of optical properties inherent to birefringent polycrystalline networks of human biological tissues
O.G. Ushenko, V.O. Balanetska, N.I. Zabolotna
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 403-410.
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Development and investigation of microwave radiation sources and detector sections using SBDs within the 220-400 GHz frequency range
A.V. Zorenko, Ya.Ya. Kudryk, Yu.V. Marunenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 411-415.
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Tunneling current via dislocations in InAs and InSb infrared photodiodes
A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 416-420.
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Energy band gap and electrical conductivity of Cd1-xMnxTe alloys with different manganese content
L.A. Kosyachenko, I.M. Rarenko, T. Aoki, V.M. Sklyarchuk, O.L. Maslyanchuk, N.S. Yurtsenyuk, Z.. Zakharuk
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 421-426.
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Comparison of optical properties of TiO2 thin films prepared by reactive magnetron sputtering and electron-beam evaporation techniques
V.V. Brus, Z.D. Kovalyuk, O.A. Parfenyuk, N.D. Vakhnyak
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 427-431.
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3C-6H transformation in heated cubic silicon carbide 3C-SiC
S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 432-436.
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Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium
I.I. Boiko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 437-440.
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Photochromic properties of composite films of thermally irreversible diarylethenes and fulgimides in polytetrafluoroethylene matrix
O.I. Kobeleva, T.M. Valova, A.O. Ait, V.A. Barachevsky, K.P. Grytsenko, V.F. Machulin, M.M. Krayushkin
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 441-444.
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Influence of polarization of conduction electrons in semiconductor on their light absorption
V.S. Severin
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 445-451.
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Adsorption of ions and thickness dependence of conductivity in liquid crystals
O.V. Kovalchuk.
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 452-455.
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Seebeck's effect in p-SiGe whisker samples
A.P. Dolgolenko, A.A. Druzhinin, A.Ya. Karpenko, S.I. Nichkalo, I.P. Ostrovsky, P.G. Litovchenko, A.P. Litovchenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 456-460.
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Investigation of luminescent properties inherent to SrTiO3:Pr3+ luminophor with Al impurity
O.M. Marchylo, L.V. Zavyalova, Y. Nakanishi, H. Kominami, A.E. Belyaev, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 461-464.
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Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.M. Sorokin, V.N. Sheremet, V.V. Shynkarenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 465-469.
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Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field
T. P. Vladimirova, Ye. M. Kyslovs`kyy, V. B. Molodkin, S. I. Olikhovskii,O. V. Koplak, E. V. Kochelab
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 470-477.
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Modelling of temperature conditions in the three-dimensional piecewise homogeneous elements of microelectronic devices
V.I. Gavrysh
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 478-481.
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Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities
T. A. Ignatyeva
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 482-488.
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Can nanoparticles be useful for antiviral therapy?
V. Lozovski , V. Lysenko, V. Pyatnitsia , M. Spivak
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.4. P. 489-491.
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