Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 4. P. 411-415.
DOI: https://doi.org/10.15407/spqeo14.04.411

Development and investigation of microwave radiation sources and detector sections using SBDs within the 220–400 GHz frequency range
A.V. Zorenko1, Ya.Ya. Kudryk2, Yu.V. Marunenko1

1State Enterprise Research Institute “Orion”, 8a, Eugene Pottier str., 03057 Kyiv, Ukraine
2V. Lashkaryov Institute of Semiconductor Physics, NAS Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; Phone: (38-044) 525-61-82; e-mail: konakova@isp.kiev.ua

Abstract. A procedure of mm- and submm-wave devices simulation based on the up-to- date simulation techniques for bulk microwave structures is proposed. We demonstrate a possibility of making microwave radiation sources based on IMPATT diodes and frequency multipliers with frequency output of 280 GHz as well as detector sections with Schottky barrier diodes for the 220–325 GHz and 325–400 GHz frequency ranges.

Keywords: microwave radiation source, frequency multiplier, detector, Schottky barrier diode, waveguide to microstrip line transition, simulation.

Full Text (PDF)

Back to N4 Volume 14