Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 4. P. 421-426.
DOI: https://doi.org/10.15407/spqeo14.04.421

Energy band gap and electrical conductivity of Cd1–xMnxTe alloys with different manganese content
L.A. Kosyachenko1, I.M. Rarenko1, T. Aoki2, V.M. Sklyarchuk1, O.L. Maslyanchuk1, N.S. Yurtsenyuk1, Z.І. Zakharuk1

1Yu. Fedkovych Chernivtsi National University, 2, Kotsyubinsky str., 58012 Chernivtsi, Ukraine
2Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

Abstract. The optical and electrical properties of single Cd 1–x Mn x Te (x = 0.07 - 0.40) crystals with p-type conduction and resistivity 10 4 – 10 8 Ohm⋅cm have been studied. The band gaps of the samples and their temperature dependences have been determined. The electrical conductivity of this material and its temperature variation are explained in terms of statistics for electrons and holes in semiconductor with taking into account the compensation process. The energy of ionization and degree of compensation levels responsible for the electrical conductivity of the samples have been found.

Keywords: diluted semiconductors, Cd 1–x Mn x Te, Mn content, band gap, compensated semiconductor.

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