|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 4. P. 437-440.
Influence of mutual drag of light and heavy holes
on magnetoresistivity and Hall-effect of p-silicon and p-germanium
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
45, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: igorboiko@yandex.ru; phone: +38(044)236-5422
Abstract.
Hall-effect and magnetoresistivity of holes in silicon and germanium are
considered with due regard for mutual drag of light and heavy band carriers. Search of
contribution of this drag shows that this interaction has a sufficient influence on both
effects.
Keywords: quantum kinetic equation, Hall-effect, magnetoresistivity, interband drag.
| ||