Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 4. P. 456-460.
DOI: https://doi.org/10.15407/spqeo14.04.456

Seebeck’s effect in p-SiGe whisker samples
A.P. Dolgolenko1, A.A. Druzhinin2, A.Ya. Karpenko1, S.I. Nichkalo2, I.P. Ostrovsky2, P.G. Litovchenko1, A.P. Litovchenko1

1Institute for Nuclear Researches, NAS of Ukraine, Kyiv E-mail: Odolgolenko@kinr.kiev.ua; ayak@kinr.kiev.ua
2Scientific Center ‘L’vivs’ka Politechknika”, L’viv E-mail: iostrov@polynet.lviv.ua

Abstract. p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval 20…400 K have been measured. It has been shown that the mobility of holes in SiGe - p whiskers upon the average is 1.5 times higher than that in bulk Si  p samples. SiGe - p whiskers possess smaller phonon scattering and larger phonon dragging in comparison with the bulk Si - p samples.

Keywords: whisker semiconductor crystals, Seebeck’s effect, thermal e.m.f., thermoelectric effect, phonon drag, carrier scattering.

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