Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 4. P. 482-488.
Partial dielectric behavior of the Mo electron spectrum
as an effect of Van Hove singularities
National Science Center “Kharkiv Institute of Physics and Technology”,
1, Academichna str., 61108 Kharkiv, Ukraine
E-mail: taignatieva@mail.ru
Abstract.
The investigation shows that the specific conductivity of Mo sharply decreases
exponentially under the temperature influence within the range from ~20 to ~60 K or
under the Re impurity influence in the concentration range up to 4 3 at.% and then
transforms into the power dependence. Noted there are two singularities in the Mo
specific conductivity, namely, an exponential conductivity change within the small
energy range and the presence of a threshold energy value equivalent to ~50 K, which
can be related to the mobility edge for localized electron states at the spectrum edge in
the vicinity of the critical energy 1C (arising of a small-size electron lens). The identity
in the behavior of Mo specific conductivity change, independently on the external
parameter influencing on the Fermi level position relatively to the critical points of the
electron spectrum, is shown. This fact permits to assume that the singularities under
consideration can be related to the partial dielectric behavior of the electron spectrum,
depending on the Fermi level position relatively to the critical energies.
Keywords: electron spectrum, dielectric behavior, critical energies, specific
conductivity, spectrum edge, localized states, electron state density.
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