Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 4. P. 354-361.
DOI: https://doi.org/10.15407/spqeo16.04.354/

Light-induced mass transport in amorphous chalcogenides/gold nanoparticles composites
M.L.Trunov1,2, P.M. Lytvyn3, P.M. Nagy4, O.S. Oberemok3, M.O. Durkot1, A.A. Tarnaii1, I.V. Prokopenko3, V.M. Rubish1

1Uzhgorod Scientific-Technological Center of IIR NAS Ukraine, Zamkovi shody str. 4a, 88000 Uzhgorod, Ukraine
2Uzhgorod National University, 3, Narodna sq., 88000 Uzhgorod, Ukraine
3V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
4Recearch Centre for Natural Science, Hungarian Academy of Sciences, Pusztaszeri st. 59-67, 1025 Budapest, Hungary

Abstract. We have established that mass-transport processes in two types of amorphous materials, based on light-sensitive inorganic compounds like Se and As20Se80 chalcogenide glasses (ChG), can be enhanced at the nanoscale in the presence of localized plasmonic fields generated by visible light in gold nanoparticles (GNPs), if the condition of surface plasmon resonance (SPR) is fulfilled. It was found that irradiation by light in the presence of SPR produces profound surface nanostructurizations, and variation in topography follows closely and permanently the underlying near field intensity pattern. We have proposed a model of mass-transport in which the existence of moving anisotropic dipolar units and internal electric field in ChG as a main driving force of this movement is suggested.

Keywords: amorphous chalcogenides, surface plasmon, noble metal nanoparticles, near-field illumination, lateral mass-transport, photoplastic effect, nanostructurization.

Full Text (PDF)

Back to N4 Volume 16